3D Semiconductor Electrode Structure with Diagonal Protrusions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional two-dimensional semiconductor devices face limitations in integration density due to the high cost and complexity of forming fine patterns, leading to a need for three-dimensional semiconductor devices with vertically stacked memory cells.
Innovation Solution
A three-dimensional semiconductor device is manufactured with a unique electrode structure featuring vertically stacked electrodes, including electrode portions, vertical and horizontal pad portions, and protrusions, which are arranged diagonally, and a method involving a thin layer structure with alternately stacked insulating and sacrificial layers, allowing for efficient lateral etching and formation of gate regions and electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional two-dimensional semiconductor devices are used to achieve high integration density, then fine pattern formation techniques are required, but extremely high-priced apparatuses are needed to form fine patterns
Solution Approach 1:
The patent transitions from conventional two-dimensional planar semiconductor devices to three-dimensional vertically stacked memory cells. The electrode structure includes electrode portions extending in a first direction, pad portions extending in an inclined direction, and protrusions arranged diagonally, creating a three-dimensional architecture that increases integration density without requiring extremely fine two-dimensional patterning, thereby reducing manufacturing costs
2Manufacturing precision
If three-dimensional vertically stacked memory cells are formed to overcome two-dimensional limitations, then integration density increases, but complex electrode structures with multiple portions and directions are required
Solution Approach 1:
The electrode structure is segmented into distinct functional portions: electrode portions extending in a first direction for electrical connection, pad portions extending in an inclined direction for contact, and protrusions with diagonal arrangements for additional connectivity. This segmentation allows each portion to be optimized for its specific function while collectively achieving high integration density in a three-dimensional configuration
3Productivity
If thin layer structure with alternately stacked insulating and sacrificial layers is used to form electrodes, then lateral etching efficiency improves, but precise control of electrode dimensions and positions is required
Solution Approach 1:
Sacrificial layers are introduced as intermediary structures between the insulating layers. These sacrificial layers enable efficient lateral etching to form the electrode portions, pad portions, and protrusions. The sacrificial layers are precisely positioned and dimensioned to control the final electrode geometry, allowing high productivity through efficient etching while maintaining precise dimensional control through the intermediary sacrificial structure
Data Source
AI summary
An electrode structure includes a plurality of electrodes vertically stacked on a substrate. Each of the plurality of electrodes includes an electrode portion, a pad portion and a protrusion. The electrode portion is parallel to a top surface of the substrate, extending in a first direction. The pad portion extends from the electrode portion in an inclined direction with respect to the top surface of the substrate. The protrusion protrudes from a portion of the pad portion in a direction parallel to the inclined direction. Protrusions of the plurality of electrodes are arranged in a direction diagonal to the first direction when viewed from a plan view.