Semiconductor Light Emitting Element Electrode Structure

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Solution Overview

Problem

Conventional semiconductor light-emitting elements with electrodes experiencing material diffusion and reaction at the semiconductor-electrode interface lead to deformation and degradation of the semiconductor layer, affecting laser characteristics and longevity.

Innovation Solution

A semiconductor light-emitting element design featuring a first electrode layer with reduced reactivity to the semiconductor layer, a second electrode layer, and a dielectric layer positioned inside the electrode opening, with the first electrode layer's end section extending to the dielectric layer to prevent material diffusion and reaction, along with a current path restriction layer to control current flow.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a conventional electrode structure with a single electrode layer is used, then the manufacturing process is simple, but material diffusion and reaction occur at the semiconductor-electrode interface causing deformation

Engineering Contradiction:

Improveelectrode structure simplicityVSAvoidsemiconductor layer stability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The electrode is divided into multiple layers: a first electrode layer in direct contact with the semiconductor layer that has reduced reactivity, and a second electrode layer on top. This segmentation prevents material diffusion and reaction at the interface while maintaining manufacturing feasibility through sequential deposition processes.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The first electrode layer acts as an intermediary barrier between the semiconductor layer and the second electrode layer. It prevents direct contact and harmful reactions between the semiconductor and the more reactive second electrode layer materials, thereby protecting the semiconductor layer from deformation.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If the dielectric layer is positioned inside the electrode opening, then material diffusion is suppressed, but the device structure becomes more complex

Engineering Contradiction:

Improveinterface stabilityVSAvoidlayer structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The dielectric layer is nested inside the electrode opening, with the first electrode layer extending from the top of the semiconductor layer to the top of the dielectric layer. This nested configuration effectively prevents material diffusion at the interface while integrating the protective function within the existing electrode structure, minimizing additional complexity.

Inventive Principle:

Principle #7Nested doll (Nesting)

3Manufacturing precision

If heating is applied during oxidation process, then material layer formation is enhanced, but thermal stress may affect the structure

Engineering Contradiction:

Improvematerial layer formation qualityVSAvoidthermal stress

Core Design Contradiction:

Manufacturing precisionVSStress or pressure

Solution Approach 1:

The first electrode layer is formed on the semiconductor layer before the oxidation process. This preliminary formation ensures that the protective barrier is already in place to prevent material diffusion during subsequent heating and oxidation steps, while the layer structure is designed to accommodate thermal expansion differences and reduce stress.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively suppresses deformation and stress at the semiconductor-electrode interface, enhancing the reliability and longevity of the semiconductor light-emitting element by preventing material diffusion and reaction, thereby maintaining stable laser performance.

Implementation Method 1

the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer

Methodology Applied

Scientific EffectDiffusion barrier: Diffusion Barrier

Implementation Method 2

a dielectric layer for adjusting the phase is provided in the opening of the p-side ring electrode

Methodology Applied

Scientific EffectPhase adjustment:

Implementation Method 3

an oxidation step of forming an oxide area in a current path restriction layer

Methodology Applied

Scientific EffectOxidation: Oxidation

Implementation Method 4

by performing heating during the oxidation step

Methodology Applied

Scientific EffectHeating: Heating

Data Source

PatentUS8270447B2Semiconductor light emitting element and manufacturing method thereof

Publication Date: 2012.09.18 FURUKAWA ELECTRIC CO LTD

AI summary

A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer.