Semiconductor Electrode Groove Design for Heat Dissipation
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Solution Overview
Problem
Existing semiconductor device manufacturing processes face issues such as cracking of the semiconductor substrate during dicing, adhesion of electrically conductive material to the chip's side surface leading to electrical connections between electrodes, and poor heat dissipation due to thick film cutting and volatilization of conductive materials.
Innovation Solution
The process involves forming a non-penetrating groove in the semiconductor substrate and separately dicing the substrate and film in different steps, using an adhesive to fill the groove and applying electrically conductive material in a manner that enhances heat dissipation by creating a larger top surface area for the electrode, which is diagonally oriented or protruding to improve heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the semiconductor substrate is diced using conventional methods, then the manufacturing process can be completed, but the substrate cracks during dicing
Solution Approach 1:
A groove is formed in the semiconductor substrate before the dicing process. This preliminary structural modification creates a stress relief path that prevents cracking during subsequent dicing operations, allowing the substrate to be successfully divided into chips without compromising integrity
Solution Approach 2:
The substrate is divided into individual chips through the dicing process, with the groove serving as a pre-defined separation line. This segmentation approach allows controlled division while maintaining the integrity of each resulting chip
2Reliability
If electrically conductive material is applied to the substrate, then electrical connections are formed, but the material adheres to the chip's side surface causing unwanted electrical connections between electrodes
Solution Approach 1:
The groove structure allows excess electrically conductive material to be removed or contained within the groove boundaries during the forming process. This extraction of unwanted material prevents it from adhering to the chip's side surface and creating harmful electrical connections between electrodes
Solution Approach 2:
The groove acts as an intermediary structure that controls the distribution and placement of electrically conductive material. It serves as a boundary that guides material placement while preventing unwanted adhesion to side surfaces
3Reliability
If a thick film is used for the electrode, then sufficient electrical conductivity is achieved, but heat dissipation becomes poor due to volatilization of conductive materials
Solution Approach 1:
The groove structure enables optimization of the electrically conductive material's physical parameters. By controlling the groove dimensions and material deposition, the system achieves the right balance between sufficient electrical conductivity and improved heat dissipation, preventing material volatilization that occurs with excessively thick films
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents substrate cracking, reduces material adhesion, and enhances heat dissipation, resulting in a high-quality semiconductor device with improved mechanical strength and reliability.
Implementation Method 1
forming a film containing an electrically conductive material on the third surface; and removing a part of the film formed adjacent to the first groove
Data Source
AI summary
A semiconductor device includes: a semiconductor chip having a bottom surface having a first area and a first side surface; and an electrode provided below the semiconductor chip, the electrode having a first top surface and a second side surface, and the electrode containing an electrically conductive material, wherein the first top surface has a second area larger than the first area, and at least a part of the first top surface is in contact with the bottom surface.