Semiconductor Light Emitting Device Electrode Layout
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Solution Overview
Problem
The configuration and layout of electrodes in semiconductor light emitting devices can lead to imbalanced current distribution, affecting light emission intensity, efficiency, and reliability due to direct contact between electrodes and semiconductor layers, causing inefficiencies in light extraction and heat dissipation.
Innovation Solution
The design includes an insulating film between the semiconductor layers and electrode corners, preventing direct contact and reducing current concentration at corners, along with a larger surface area for p-side electrodes to enhance light extraction and heat dissipation, while maintaining a smaller surface area for n-side electrodes for efficient light output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If electrodes are formed on one surface side of the semiconductor layer, then the degrees of freedom of electrode configuration and layout is high, but imbalanced current distribution occurs affecting light emission intensity and efficiency
Solution Approach 1:
The patent applies local quality by making the electrode configuration asymmetric: the p-side electrode has a larger surface area than the n-side electrode. This local differentiation in electrode size and shape optimizes the current distribution across the light emitting region, ensuring uniform light emission intensity while maintaining high adaptability in overall electrode layout design.
2Use of energy by moving object
If electrodes are formed on one surface side, then light extraction is not impeded, but current concentration at electrode corners causes inefficiencies in light extraction and heat dissipation
Solution Approach 1:
The patent changes the geometric parameters of the electrodes, specifically making the p-side electrode larger than the n-side electrode. This parameter modification distributes the current more evenly across the light emitting region, reducing current concentration at corners and minimizing energy loss while maintaining efficient light extraction.
3Temperature
If p-side electrode has larger surface area, then light extraction and heat dissipation are enhanced, but device complexity increases
Solution Approach 1:
The patent employs asymmetry in the electrode design where the p-side electrode is deliberately made larger than the n-side electrode. This asymmetric configuration enhances heat dissipation and light extraction efficiency without significantly increasing device complexity, as it simply modifies the relative sizes of existing electrode components rather than adding new structural elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures uniform light emission intensity, increased luminous efficiency, and improved reliability by reducing current concentration and enhancing light extraction and heat dissipation, leading to a more efficient and reliable semiconductor light emitting device.
Implementation Method 1
an insulating film between the semiconductor layers and electrode corners, preventing direct contact and reducing current concentration at corners
Implementation Method 2
a larger surface area for p-side electrodes to enhance light extraction and heat dissipation
Implementation Method 3
a larger surface area for p-side electrodes to enhance light extraction and heat dissipation
Data Source
Figure 1
Figure 2A~2B
Figure 3A~3B
AI summary
According to one embodiment, the n-side electrode has a corner and a plurality of straight portions. The plurality of straight portions extends in different directions. The corner connects the plurality of straight portions. A first insulating film is provided between the semiconductor layer and the corner of the n-side electrode. The corner is not in contact with the semiconductor layer. The straight portions of the n-side electrode are in contact with the semiconductor layer.