Semiconductor Electrode Isolation for Accurate Wafer Breakdown Testing
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Solution Overview
Problem
Current semiconductor devices face challenges in increasing reliability, particularly in the design and testing phases, due to limitations in the independent control of field plates and electrodes, which affects the accuracy of wafer tests and the identification of defective components.
Innovation Solution
The semiconductor device incorporates a field plate electrode and gate electrode, which are electrically isolated from the source electrode, allowing for independent voltage application and enhanced control during wafer tests, thereby increasing the reliability of the semiconductor device by enabling more detailed screening and improved breakdown voltage verification.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the field plate and source electrode are electrically connected in conventional semiconductor devices, then the structure is simpler and manufacturing is easier, but the reliability and accuracy of wafer tests deteriorate due to inability to independently control voltages
Solution Approach 1:
The patent segments the electrical connection between the field plate and source electrode by introducing an insulating film (first insulating film) between them. This allows the field plate electrode and source electrode to be electrically isolated while maintaining their structural proximity, enabling independent voltage control for improved reliability testing
2Measurement precision
If conventional electrode configurations are used, then the device structure is simpler, but the measurement precision and defect identification accuracy deteriorate
Solution Approach 1:
The patent divides the electrode system into independently controllable segments (field plate electrode, gate electrode, source electrode) with insulating films between them, enabling separate voltage application and measurement for each component, thereby improving wafer test accuracy and defect identification
Solution Approach 2:
The patent introduces insulating films as intermediary elements between conductive electrodes. These intermediaries enable electrical isolation while maintaining structural integration, allowing precise voltage control and measurement for improved testing accuracy
3Adaptability or versatility
If the field plate is electrically isolated from the source electrode, then independent voltage control and testing capability improve, but the manufacturing process becomes more complex
Solution Approach 1:
The patent segments the electrical path using insulating films deposited between electrodes during the manufacturing process. This segmentation provides voltage control flexibility while integrating the isolation into the existing fabrication sequence, balancing manufacturing complexity with testing versatility
4Manufacturing precision
If conventional electrode designs are used, then the device structure is less complex, but the breakdown voltage verification accuracy deteriorates
Solution Approach 1:
The patent segments the electrode system into independently controllable units with insulating barriers, enabling precise voltage application and measurement during breakdown voltage verification, thereby improving manufacturing precision in characterizing device limits
Data Source
AI summary
A semiconductor device includes first and second electrodes, first to third semiconductor regions, first and second conductive parts, a first conductive region, a first electrode region, and a conductive layer. The first-conductivity-type third semiconductor region is on the second-conductivity-type second semiconductor region, which is on a portion of the first-conductivity-type first semiconductor region, which is on and electrically connected to the first electrode. A portion of the first conductive part faces the second semiconductor region side surface. A portion of the second conductive part faces the first semiconductor region side surface. The second electrode is on and electrically connected to the second and third semiconductor regions. The first electrode region is electrically connected to the first conductive region, which is on and electrically connected to the second conductive part. The conductive layer is electrically connected to the second electrode and to the first conductive and/or first electrode region.