Semiconductor Electrode Manufacturing Using Low Ionization Metal Layer
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Solution Overview
Problem
The increasing demand for thicker electrodes in semiconductor devices to support higher current capacity and speed leads to increased manufacturing processes, exposing unstable metals to ambient humidity, which can cause erosion and reliability issues, particularly when using copper or similar metals.
Innovation Solution
A semiconductor device manufacturing method that involves forming a metal layer film, a first insulating layer with openings, a second metal layer, and then using a third metal layer with a lower ionization tendency to cover the exposed surfaces of the first and second metal layers, reducing the number of manufacturing processes while maintaining reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the electrode portion is formed thicker to support larger current capacity and higher speed, then the current capacity and speed are improved, but the number of manufacturing processes increases
Solution Approach 1:
The patent combines multiple functions into the third metal layer: it serves as both a protective barrier against oxidation and a conductive electrode material. This merging eliminates the need for separate protective coating processes while maintaining both protection and electrical functionality, thereby reducing the total number of manufacturing steps.
Solution Approach 2:
The third metal layer with lower oxidation tendency is formed preliminarily to protect the unstable metal electrode from oxidation before the device is exposed to ambient conditions. This preliminary protective action prevents erosion issues that would otherwise require additional corrective or protective processes later in manufacturing.
2Power
If the electrode portion is formed thicker to support larger current capacity and higher speed, then the current capacity and speed are improved, but the manufacturing time and process complexity increase
Solution Approach 1:
By combining the protective function and conductive function into a single third metal layer, the patent eliminates sequential processes that would otherwise be required (separate protection layer formation + electrode formation), thereby reducing total manufacturing time while achieving both thick electrode benefits and protection.
3Reliability
If a follow on manufacturing process of covering the surface of the electrode portion with metal (Au) or the like is employed, then the reliability is improved, but the number of manufacturing processes increases
Solution Approach 1:
The third metal layer merges the protective function (preventing oxidation of unstable metals) and the electrode function (providing electrical conductivity) into a single integrated structure. This eliminates the need for separate protective coating processes while maintaining both reliability and electrical performance.
Solution Approach 2:
The patent applies the third metal layer specifically where needed - on the exposed surfaces of the unstable metal electrode that are susceptible to oxidation. This localized application provides protection precisely where required without adding unnecessary processes to other areas of the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces the number of manufacturing processes without compromising the reliability of the semiconductor device by using a third metal layer with a lower oxidation tendency to protect the electrode surfaces, thereby preventing erosion and ensuring device stability.
Implementation Method 1
forming an electrode portion by covering exposed surfaces of the first metal layer and the second metal layer with a third metal layer including a metal of a smaller ionization (oxidation) tendency than the metal of the second metal layer
Data Source
AI summary
According to one embodiment, a semiconductor device manufacturing method includes: forming a film to be a first metal layer on a substrate where an element portion is formed; forming a first insulating layer provided with an opening on the film to be the first metal layer; forming a second metal layer in the opening of the first insulating layer; eliminating the first insulating layer; eliminating the film to be the first metal layer with the second metal layer used as a mask so as to form the first metal layer; and forming an electrode portion by covering exposed surfaces of the first metal layer and the second metal layer with a third metal layer including a metal of a smaller ionization tendency than the metal of the second metal layer.