Semiconductor Electrode Openings for Pre-Bump Foreign Matter Inspection
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Solution Overview
Problem
In the manufacturing process of liquid crystal display driver ICs, foreign matter inspection before forming bump electrodes is hindered due to the planarization of the second insulating film, which obscures the recessed and protruding patterns of the uppermost layer metal wiring, preventing accurate alignment of inspection devices.
Innovation Solution
The introduction of a semiconductor device with an insulating film featuring distinct opening portions, including a first opening for connecting electrodes to metal wiring and a second opening with a unique planar configuration for foreign matter inspection, allowing alignment and inspection prior to plated metal formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If the second insulating film is planarized to provide a flat surface, then the surface flatness is improved, but the recessed and protruding patterns of the uppermost layer metal wiring become obscured, making alignment of inspection devices difficult
Solution Approach 1:
A recognition pattern is introduced as an intermediary element between the planarized insulating film surface and the inspection device. This pattern provides visible alignment markers that are not obscured by the planarization process, enabling accurate positioning of the inspection device while maintaining the flat surface required for subsequent processing steps.
Solution Approach 2:
The recognition pattern serves as a copied reference from the original metal wiring patterns below. By creating a surface-level representation of the underlying structure, the inspection device can align accurately without needing to see the actual metal wiring patterns that are hidden beneath the planarized insulating film.
2Reliability
If foreign matter inspection is performed before forming bump electrodes, then the reliability of the manufacturing process is improved, but the inspection cannot be accurately performed due to inability to align inspection device
Solution Approach 1:
The recognition pattern acts as a mediator that enables the inspection device to locate and align with the correct inspection region. By providing visible reference markers on the planarized surface, the device can accurately position itself to detect foreign matter before bump electrode formation, thereby maintaining high reliability without alignment difficulties.
3Manufacturing precision
If the insulating film is planarized using CMP method, then the manufacturing precision is improved, but the unique patterns needed for inspection device alignment are eliminated
Solution Approach 1:
The insulating film structure is segmented into functional regions: the planarized insulating film for surface flatness, and a separate recognition pattern region for alignment purposes. This segmentation allows the planarization process to improve surface precision while the distinct recognition pattern provides the necessary visual cues for inspection device alignment.
Solution Approach 2:
The recognition pattern serves as an intermediary layer that bridges the gap between the planarized insulating film surface and the inspection device requirements. It provides the pattern recognition capability needed for alignment without interfering with the surface planarity achieved through CMP processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables effective foreign matter inspection and prevention of elevated bump electrodes, reducing the risk of damage to liquid crystal panels during mounting by ensuring accurate alignment and detection of foreign matter.
Implementation Method 1
a foreign matter inspection step of performing alignment of an inspection device using the second opening portion and inspecting presence or absence of foreign matter on the surface of the semiconductor substrate using the inspection device
Implementation Method 2
The plated metal forming step forms a plated metal using an electrolytic plating method
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having a surface with a metal wiring on the surface, an insulating film that covers the surface of the semiconductor substrate, and a plurality of electrodes disposed on the insulating film and having mutually same planar shapes. The insulating film has a plurality of opening portions formed to face respective bottom surfaces of the plurality of electrodes and expose the metal wiring. The plurality of opening portions includes a first opening portion having a first planar configuration and a second opening portion having a second planar configuration different from the first planar configuration.