Semiconductor Electrode Pad Insulation via Control Portions
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Solution Overview
Problem
In semiconductor device fabrication, wafer burn-in before the formation of under bump metals (UBMs) can lead to insulation issues and pollution of plating baths, as well as risks of probe card damage due to abnormal heat generation from faulty semiconductor elements.
Innovation Solution
Implementing a semiconductor device with a control portion, such as a metal fuse or switch circuit, that allows for electrical insulation of electrode pads during wafer burn-in, preventing the application of electrical energy to faulty elements and avoiding resin coating, thus ensuring reliable insulation without polluting the plating bath.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If wafer burn-in is performed before formation of under bump metals, then productivity is improved by early detection of faulty elements, but the plating bath becomes polluted and insulation issues occur
Solution Approach 1:
The patent divides the electrode pad structure into multiple layers: a first electrode pad layer, an insulating film layer, and a second electrode pad layer. This segmentation allows the wafer burn-in to be performed on the first electrode pad layer before UBM formation, while the insulating film prevents pollution of subsequent plating processes. The segmented structure enables early fault detection without compromising the integrity of later fabrication steps.
Solution Approach 2:
The patent performs wafer burn-in testing on the first electrode pad layer before forming the under bump metals and second electrode pad layer. This preliminary action allows faulty semiconductor elements to be identified and isolated early in the fabrication process, preventing waste of subsequent processing steps on defective devices while maintaining a clean plating environment through the insulating film barrier.
2Area of stationary object
If electrode pads are made smaller to increase density, then area is reduced for higher integration, but connectivity and reliability deteriorate
Solution Approach 1:
The patent transitions from a single-plane electrode pad structure to a multi-layer vertical structure. The first electrode pad layer is formed at a lower level, followed by an insulating film, and then the second electrode pad layer at a higher level. This dimensional change allows electrode pads to maintain small footprint area for high density while ensuring reliable connectivity through the vertical stacking architecture, with the insulating film providing electrical isolation between layers.
3Reliability
If resin coating is applied to insulate faulty electrode pads, then electrical insulation is achieved, but fabrication complexity and process steps increase
Solution Approach 1:
Instead of applying resin coating to individual faulty electrode pads, the patent forms a uniform insulating film layer that covers all first electrode pad locations across the entire wafer. This copying approach applies the same insulating structure to all devices simultaneously, eliminating the need for selective resin application processes and reducing fabrication complexity while ensuring reliable electrical insulation for fault isolation during wafer burn-in.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively insulates semiconductor elements with leakage issues before wafer burn-in, preventing probe card damage and maintaining the integrity of the plating process, while reducing the number of fabrication steps and avoiding resin application.
Implementation Method 1
a control portion electrically connected to the internal circuit and the electrode pad for controlling electrical connection between the internal circuit and the electrode pad
Data Source
AI summary
A semiconductor device includes: a semiconductor element (1) having an internal circuit (17); and electrode pads (22, 22, . . . ) provided for the semiconductor element (1). The electrode pads (22, 22, . . . ) are electrically connected to the internal circuit (17) via control portions (31) for controlling electrical connection between the electrode pads (22, 22, . . . ) and the internal circuit (17).