Semiconductor Electrode Protection During Dry Etching
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Solution Overview
Problem
Conventional semiconductor device manufacturing techniques face challenges in maintaining ohmic characteristics and reducing contact resistance during dry etching, which increases manufacturing costs and device size due to the need for protective layers.
Innovation Solution
A semiconductor device configuration featuring a semiconductor layer, an ohmic first electrode, an insulating film with a specific opening area, and a third electrode formed over the first electrode, which protects the ohmic contact from dry etching while minimizing device size and cost by separating the electrode layer into a second and third electrode through dry etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective layer is formed to protect the ohmic electrode from dry etching, then the ohmic characteristics are maintained, but the manufacturing cost increases and the device size expands
Solution Approach 1:
The insulating film and the third electrode are merged to form a composite protective structure. The insulating film is formed first, then the third electrode is formed over the insulating film and the first electrode, creating a combined protection mechanism that eliminates the need for a separate protective layer while maintaining ohmic characteristics during dry etching
Solution Approach 2:
The third electrode serves multiple functions: it acts as a protective layer during dry etching, functions as an electrical electrode, and is formed using the same material and process as the second electrode. This multi-functionality reduces the need for additional protective layers and simplifies the overall device structure
2Reliability
If the third electrode is provided to cover over the entire first electrode, then the ohmic characteristics are ensured, but the semiconductor device size expands due to design margin
Solution Approach 1:
The insulating film is selectively positioned to cover only the first edge of the first electrode, providing localized protection where it is most needed during dry etching. This localized approach maintains ohmic characteristics while minimizing the area occupied by protective structures, thereby reducing device size
Data Source
AI summary
A semiconductor device includes: a semiconductor layer; a first electrode that is in ohmic contact with part of the semiconductor layer; an insulating film that is formed over from the semiconductor layer to the first electrode and has an opening area on an inner side of a first edge of the first electrode; a second electrode that is located at a position different from the first electrode and is formed on at least one of the insulating film and the semiconductor layer; and a third electrode that is made of an identical component with a component of the second electrode and is formed on the first electrode through the opening area and is also formed over from the first electrode to an inner side of the first edge on the insulating film.