Semiconductor Electrode Layout for Lower Reverse Recovery Current
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Solution Overview
Problem
Semiconductor devices, such as transistors, face challenges in achieving stable characteristics and efficient carrier evacuation during reverse recovery operations, leading to high reverse recovery current and reduced breakdown strength.
Innovation Solution
The semiconductor device incorporates a specific electrode and wiring member configuration with extended semiconductor regions and insulating members to facilitate efficient carrier evacuation, reducing reverse recovery current and enhancing breakdown strength through controlled potential application.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electrode and wiring configurations are used, then device structure is simple, but reverse recovery current is high and breakdown strength is reduced
Solution Approach 1:
The device is divided into multiple functional regions including a first region with a first electrode and second electrode, and a second region with a third electrode. The semiconductor layer is segmented into multiple doped regions (first doped region, second doped region, third doped region) with different conductivity types. This segmentation allows independent optimization of each region for carrier evacuation while maintaining overall device integrity and improving breakdown strength.
Solution Approach 2:
Different regions of the semiconductor layer are doped with different doping concentrations and conductivity types to create local quality variations. The first doped region has a first doping concentration, the second doped region has a second doping concentration, and the third doped region has a third doping concentration. This local quality differentiation enables efficient carrier evacuation in specific regions while maintaining high breakdown strength in other regions.
2Reliability
If standard semiconductor regions are used, then manufacturing is straightforward, but carrier evacuation efficiency is low
Solution Approach 1:
The semiconductor layer is pre-doped with specific doping concentrations and conductivity types in different regions before the reverse recovery operation. The first doped region is prepared with a first doping concentration and conductivity type, the second doped region with a second doping concentration and conductivity type, and the third doped region with a third doping concentration and conductivity type. This preliminary preparation ensures that when reverse recovery occurs, carriers are efficiently evacuated through the pre-configured doped regions without requiring complex real-time control.
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, a first wiring member, a semiconductor member, and an insulating member. The first wiring member includes a first extending portion. A part of the third electrode is between the first electrode and the first extending portion. An other part of the third electrode is between the first and second electrodes. The semiconductor member is provided between the first and second electrodes and between the first electrode and the first extending portion. The semiconductor member includes first to sixth semiconductor regions. The first semiconductor region includes first and second partial regions. The first partial region is located between the first electrode and the third electrode. The insulating member includes the first insulating region. The first insulating region is provided between the third electrode and the semiconductor member.