Semiconductor Electrode Segmentation for Warping Prevention
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Solution Overview
Problem
Semiconductor elements with switching circuits, such as MOSFETs and IGBTs, face warping issues during manufacturing due to thermal expansion differences between conductive members and silicon components, leading to degraded bonding strength with wiring members.
Innovation Solution
A semiconductor element design featuring an obverse face electrode with a larger first section and smaller second sections, spaced apart, and a reverse face electrode with a silicide layer, along with a conductive bonding layer between the die pad and reverse face electrode, to improve heat dissipation and prevent warping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conductive member with high thermal conductivity is used to improve heat dissipation, then heat dissipation performance is improved, but the semiconductor element warps due to thermal expansion differences
Solution Approach 1:
The conductive member is divided into a first section and multiple second sections that are spaced apart. This segmentation reduces the total volume of the conductive member, thereby reducing thermal expansion effects and preventing warping while maintaining heat dissipation performance through the distributed sections.
Solution Approach 2:
The conductive member has different configurations in different regions: a first section with a larger area for heat dissipation and multiple smaller second sections spaced apart for reduced thermal expansion. This local differentiation allows simultaneous optimization of heat dissipation and warping prevention.
2Shape
If the conductive member volume is reduced to prevent warping, then warping is prevented, but heat dissipation performance may be degraded
Solution Approach 1:
By segmenting the conductive member into distributed sections, the patent achieves both warping prevention through reduced total volume and maintains heat dissipation performance through the distributed arrangement of conductive sections that remain in contact with the semiconductor element.
Solution Approach 2:
The second sections are arranged in a direction perpendicular to the thickness direction, utilizing spatial distribution to maintain heat dissipation effectiveness while reducing the problematic volume concentration that causes warping.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances heat dissipation performance, prevents warping, and maintains strong bonding between the semiconductor element and the die pad, ensuring reliable operation.
Implementation Method 1
The conductive member and the plurality of copper wires have relatively high thermal conductivity. Accordingly, the copper wires can be connected to the conductive member, and the heat dissipation performance of the semiconductor element is improved
Implementation Method 2
such a phenomenon originates from a change in volume of the conductive member due to the temperature, because the conductive member is higher in thermal expansion coefficient, than silicon which is the predominant component of the semiconductor element
Data Source
AI summary
A semiconductor element includes a main body and an obverse face electrode. The main body includes an obverse face that faces in a thickness direction. The obverse face electrode is electrically connected to the main body. The obverse face electrode includes a first section and a plurality of second sections. The first section is provided on the obverse face. The plurality of second sections are in contact with the first section, and spaced apart from each other in a direction perpendicular to the thickness direction. A total area of the plurality of second sections is smaller than an area of the first section including portions overlapping with the plurality of second sections, in a view along the thickness direction.