Semiconductor Electrode Fabrication via Segmented Etching
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Solution Overview
Problem
In conventional semiconductor device manufacturing, etching one side of the substrate often damages the already fabricated electrodes on the other side due to the use of strong chemicals like acids or bases.
Innovation Solution
A method involving the formation of connected openings in interlayer dielectric layers and resist masks, allowing for the retention of conductive layers as electrodes without the need for chemical etching, which avoids damaging pre-formed electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemical etching is used to fabricate electrodes on one side of the semiconductor substrate, then the electrode fabrication on that side is achieved, but the pre-formed electrodes on the other side are damaged
Solution Approach 1:
The patent divides the electrode fabrication process into separate steps for each side of the substrate. The first surface electrode is formed completely (including etching) before forming the second surface electrode. This segmentation isolates the chemical etching process to only affect the intended side, preventing damage to electrodes on the other side.
Solution Approach 2:
The patent performs preliminary formation of the first surface electrode (including its etching process) before forming the second surface electrode. By completing the first electrode fabrication in advance, the electrode is already protected or positioned such that subsequent etching on the opposite side does not damage it.
2Device complexity
If single-side photolithographic process is used to fabricate electrodes, then the process complexity is reduced, but the chemical agents damage pre-formed electrodes on the opposite side
Solution Approach 1:
The patent segments the photolithographic and etching processes into sequential single-side operations. First, the first surface electrode is fabricated using photolithography and etching on one side. Then, the second surface electrode is fabricated using the same single-side process on the opposite side. This segmentation maintains process simplicity while eliminating cross-side damage.
Solution Approach 2:
The patent performs preliminary fabrication of the first surface electrode using photolithography and etching before fabricating the second surface electrode. This preliminary action establishes the first electrode in a state that prevents subsequent chemical agents from damaging it during the second electrode's fabrication.
3Productivity
If strong acid or base is used for etching the semiconductor layer, then the etching efficiency is improved, but the pre-formed electrodes on the other side are damaged
Solution Approach 1:
The patent divides the etching process into separate sequential operations for each side. Strong acid or base is used for etching the first surface electrode with high efficiency, then the same aggressive etching is used for the second surface electrode. By segmenting the process, the harmful chemicals only affect the current working side and cannot reach or damage electrodes on the opposite side.
Data Source
AI summary
The invention disclosed a method for manufacturing an electrode of a semiconductor device, comprising: forming a first interlayer dielectric layer having a first opening on a first surface of a semiconductor substrate; forming a first resist mask having a second opening on a surface of the first interlayer dielectric layer, wherein the first opening and the second opening are connected to form a first stacked opening; forming a first conductive layer on the first resist mask, wherein the first conductive layer comprises a first portion being located on a surface of the first resist mask and a second portion being located inside the first stacked opening; and removing the first resist mask, wherein the first portion of the first conductive layer is removed together with the first resist mask, and the second portion of the first conductive layer is retained as a first surface electrode.