Semiconductor Electrode Shape Control via Aluminum Gradient Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor device manufacturing processes struggle to create electrodes with complex shapes and uniform electric field distribution, leading to high electric field intensity at edges, which degrades device performance and reliability.
Innovation Solution
An electrode shape controlling layer with adjustable aluminum content is used, allowing for varying etching speeds to create electrodes with specific cross-sectional shapes, such as trapezoidal or U-shaped, which disperses or gentles the electric field distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional planar electrode structures are used, then manufacturing process is simple, but electric field distribution is non-uniform with high intensity at edges
Solution Approach 1:
The patent transitions from conventional planar (2D) electrode structures to three-dimensional electrode structures with vertical components. The electrodes are configured to extend vertically from the substrate surface, creating a 3D geometry that fundamentally changes the electric field distribution pattern from concentrated edge fields to more uniform distributed fields throughout the device volume.
Solution Approach 2:
The patent employs curved or rounded electrode surfaces instead of sharp edges. The vertical electrodes have rounded tops and smooth transitions, eliminating the sharp corners that concentrate electric fields. This curvature distributes the electric field more evenly across the electrode surfaces, preventing localized field intensity peaks that lead to breakdown.
2Reliability
If field plates are added to improve electric field distribution, then electric field intensity is reduced, but manufacturing process complexity increases
Solution Approach 1:
The patent combines the electrode structure with the field control function into a single integrated component. Instead of adding separate field plates to conventional electrodes, the electrodes themselves are designed with vertical extensions and curved surfaces that simultaneously serve as both the electrical contact and the field-distributing element, eliminating the need for additional field plate structures.
Solution Approach 2:
The vertical electrodes serve multiple functions: they provide the necessary electrical connection to the active regions while simultaneously acting as field-distributing structures. The same electrode components that carry current also control the electric field distribution through their 3D geometry, reducing the need for specialized field control elements.
3Reliability
If gate shape is controlled to improve electric field distribution, then device performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs curved or rounded electrode surfaces instead of sharp edges. The vertical electrodes have rounded tops and smooth transitions, eliminating the sharp corners that concentrate electric fields. This curvature distributes the electric field more evenly across the electrode surfaces, preventing localized field intensity peaks that lead to breakdown.
4Reliability
If electrodes with complex shapes are manufactured, then electric field distribution is improved, but manufacturing capability is challenged
Solution Approach 1:
The patent transitions from conventional planar (2D) electrode structures to three-dimensional electrode structures with vertical components. The electrodes are configured to extend vertically from the substrate surface, creating a 3D geometry that fundamentally changes the electric field distribution pattern from concentrated edge fields to more uniform distributed fields throughout the device volume.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the manufacture of electrodes with complex shapes, improving electric field distribution and enhancing semiconductor device performance by increasing breakdown voltage and reliability.
Implementation Method 1
When the electrode shape controlling layer is etched, the horizontal etching speed and the vertically etching speed vary based on the content of aluminum
Data Source
Figure 1~2
Figure 3A~3B
Figure 3C~3D1
AI summary
A semiconductor device and a manufacturing method therefor are disclosed. The semiconductor device comprises: a semiconductor device active region (1); an electrode shape controlling layer (2) disposed on the semiconductor device active region (1), the electrode shape controlling layer (2) containing aluminum, the content of aluminum being reduced in a direction from bottom to up from the semiconductor device active region (1), an electrode region being disposed on the electrode shape controlling layer (2), a groove extended toward the semiconductor device active region (1) and penetrating through the electrode shape controlling layer (2) longitudinally being disposed in the electrode region, all or part of a side surface of the groove having a shape of one of a straight slope, a concave slope protruded away from a central line of the groove and a convex slope protruded toward the central line of the groove; and an electrode (5) disposed in the groove in the electrode region entirely or partially, the electrode (5) having a shape matching with the shape of the groove, a bottom portion of the electrode (5) being contacted with the semiconductor device active region (1). By controlling the shape of the electrode (5), the electrical field intensity near the electrode (5) is changed and performances of the semiconductor device, such as breakdown voltage and reliability, are improved.