Semiconductor Electrode Silicide Formation for Stability
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving favorable electrical characteristics, stability, low power consumption, and high productivity, particularly in manufacturing processes for transistors using metal oxide semiconductor layers.
Innovation Solution
A semiconductor device structure comprising a semiconductor layer with a first and second electrode, where the electrodes include conductive layers with specific materials and layers containing silicon and nitrogen, and a manufacturing method involving steps like silane exposure and plasma treatment to form stable conductive layers, ensuring high surface stability and low resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional conductive layers are used in semiconductor devices, then manufacturing is simpler, but electrical characteristics and stability are insufficient
Solution Approach 1:
The electrode is divided into multiple functional layers: a first conductive layer (e.g., titanium or tungsten) providing adhesion and barrier functions, and a second conductive layer (e.g., copper) providing low resistance. This segmentation allows each layer to optimize its specific function, resolving the contradiction between reliability and complexity by achieving superior electrical characteristics through structured complexity rather than material complexity alone.
Solution Approach 2:
The patent employs composite electrode structures combining different conductive materials with complementary properties. The first conductive layer (titanium/tungsten) provides oxidation resistance and adhesion, while the second conductive layer (copper) provides low electrical resistance. This composite approach achieves superior reliability by leveraging the strengths of multiple materials working together.
2Reliability
If high conductivity materials are used, then electrical characteristics improve, but power consumption increases due to higher power loss
Solution Approach 1:
The segmented electrode structure separates the adhesion/barrier function (first conductive layer) from the current conduction function (second conductive layer). The second layer uses high conductivity materials like copper to minimize resistive power loss, directly addressing the energy loss problem while maintaining excellent electrical characteristics through the combined structure.
3Productivity
If simple manufacturing processes are used, then productivity is higher, but manufacturing precision and yield are lower
Solution Approach 1:
The first conductive layer is formed as a preliminary barrier and adhesion layer before forming the second conductive layer. This preliminary action prevents oxidation and ensures proper adhesion, improving manufacturing precision and yield by addressing potential failure points before they occur, while the overall process remains compatible with existing semiconductor manufacturing capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides semiconductor devices with improved electrical characteristics, stability, and low power consumption, while enhancing manufacturing productivity and yield by forming stable conductive layers with specific materials and processes.
Implementation Method 1
A metal oxide has attracted attention recently as a material used for a semiconductor layer of a transistor
Implementation Method 2
a fourth step of etching the first conductive film to expose a side surface of the first conductive film and part of a top surface of the semiconductor layer
Data Source
AI summary
A semiconductor device with favorable electrical characteristics is provided. A source electrode and a drain electrode of a channel-etched transistor are each made to have a stacked-layer structure including a first conductive layer and a second conductive layer. A silicide that contains a metal element contained in the second conductive layer and nitrogen is formed to be in contact with a top surface and a side surface of the second conductive layer. Before etching of the first conductive layer, the silicide is formed by exposing the second conductive layer to an atmosphere containing silane, and plasma treatment is performed in a nitrogen atmosphere without exposure to the air.