Semiconductor Electrode Structure Using Silver and Titanium Nitride
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Solution Overview
Problem
Conventional semiconductor devices using gold for electrodes are costly and require downsizing, resource optimization, easier manufacturing, improved workability, and accurate manufacturing processes.
Innovation Solution
A semiconductor device structure featuring a titanium layer, an aluminum layer, a titanium nitride layer, and a silver electrode layer, with optional additional titanium layers, where the titanium nitride layer has a thickness of at least 100 nm or greater than 50 nm, reducing material costs and enhancing ohmic contact and adhesiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If gold (Au) is used for the electrode, then the electrode具有良好的导电性和稳定性, but the manufacturing cost increases
Solution Approach 1:
The patent uses a composite electrode structure consisting of multiple layers (Ti, Al, TiN, and Ag) rather than a single gold layer. This composite structure combines the advantages of different materials: Ti provides adhesion to the semiconductor, Al provides conductivity, TiN provides barrier and diffusion prevention, and Ag provides low cost with good conductivity. This resolves the contradiction by achieving gold-like performance at lower cost through material composition rather than using expensive gold alone.
Solution Approach 2:
The patent specifies precise thickness parameters for each layer (Ti: 5-50nm, Al: 50-200nm, TiN: 100-500nm, Ag: 100-500nm) to optimize the balance between cost and performance. By controlling these parameters, the electrode achieves adequate conductivity and stability without requiring expensive gold, thus resolving the cost-performance contradiction through parameter optimization.
2Reliability
If the titanium nitride layer thickness is increased, then the barrier performance and adhesiveness improve, but the manufacturing complexity and time increase
Solution Approach 1:
The patent optimizes the TiN layer thickness to a specific range (100-500nm) that provides sufficient barrier performance and adhesiveness without excessive thickness. This parameter optimization ensures adequate functionality while minimizing manufacturing time and complexity, resolving the contradiction between performance and manufacturing efficiency.
Solution Approach 2:
The patent applies TiN thickness that is sufficient to achieve the required barrier and adhesion functions but not excessively thick. This partial action approach provides just enough protection and bonding without the diminishing returns of excessive thickness, thereby balancing performance requirements with manufacturing efficiency.
3Reliability
If multiple titanium layers are added, then the ohmic contact and layer adhesiveness improve, but the device structure becomes more complex
Solution Approach 1:
The patent employs a composite multi-layer structure (Ti-Al-TiN-Ag with optional additional Ti layers) where each layer serves a specific function. The first Ti layer provides initial adhesion, Al provides conductivity, TiN provides barrier properties, and additional Ti layers enhance ohmic contact and interlayer adhesion. This composite approach achieves superior electrical and mechanical properties while maintaining a systematic and manufacturable structure.
Solution Approach 2:
The electrode structure is segmented into multiple functional layers, each with a specific role in achieving overall performance. The segmentation allows optimization of each layer's thickness and material properties independently, achieving good ohmic contact and adhesiveness without creating an unmanageably complex structure.
Data Source
AI summary
An object is to use an electrode made of a less expensive material than gold (Au). A semiconductor device comprises: a first titanium layer that is formed to cover at least part of a semiconductor layer and is made of titanium; an aluminum layer that is formed on the first titanium layer on opposite side of the semiconductor layer and mainly consists of aluminum; a titanium nitride layer that is formed on the aluminum layer on opposite side of the first titanium layer and is made of titanium nitride; and an electrode layer that is formed on the titanium nitride layer on opposite side of the aluminum layer and is made of silver.