Semiconductor Package Electrode Slit Layout for Heat and Short-Circuit Control
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Solution Overview
Problem
Conventional semiconductor packages face challenges in heat management and reliability due to uneven heat distribution and potential short circuits between electrodes, particularly during the reflow process and power cycling tests.
Innovation Solution
The semiconductor device incorporates a second electrode with a slit between its terminals and a third electrode positioned inside this slit, which helps in dispersing heat and preventing short circuits by maintaining a gap, using conductive joining materials like solder to connect the electrodes and lead frames, and a sealant to secure the structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple source terminals are arranged adjacent to each other in parallel with the gate terminal on the outer periphery, then the electrical connection is improved, but heat distribution becomes uneven and short circuits may occur
Solution Approach 1:
The patent divides the continuous electrode structure into segmented terminals with insulating material positioned between adjacent source terminals. This segmentation prevents direct thermal and electrical contact between terminals, reducing heat concentration and preventing short circuits while maintaining electrical connectivity through separate pathways.
Solution Approach 2:
An insulating material is introduced as an intermediary element between adjacent source terminals. This intermediary layer provides both electrical insulation to prevent short circuits and thermal isolation to improve heat distribution, resolving the contradiction between electrical connection reliability and temperature uniformity.
2Power
If multiple source terminals are arranged adjacent to each other in parallel, then the current carrying capacity is increased, but short circuits between terminals may occur
Solution Approach 1:
The electrode structure is segmented into discrete terminals separated by insulating material. This segmentation allows multiple terminals to carry current in parallel (increasing power capacity) while the insulating segments prevent electrical breakdown and short circuits between adjacent terminals.
Solution Approach 2:
The insulating material serves as a mediator between adjacent conductive terminals, enabling high current capacity through parallel terminal arrangement while preventing harmful electrical contact. The intermediary layer maintains the necessary electrical isolation despite close physical proximity of terminals.
3Productivity
If the gate terminal is positioned on the outer periphery side, then the packaging density is improved, but heat management becomes difficult
Solution Approach 1:
The peripheral gate terminal structure is segmented with insulating material between adjacent source terminals. This segmentation creates thermal isolation zones that facilitate heat management while maintaining the compact peripheral arrangement for high packaging density. The segmented structure prevents heat accumulation that would otherwise occur in dense peripheral configurations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the maximum temperature of the second electrode, enhances heat dissipation, and prevents failures like cracking in the joining material, thereby increasing the operating life and reliability of the semiconductor device.
Implementation Method 1
The third electrode is connected to the second face via a joining material, inside the slit provided in the second electrode
Data Source
AI summary
According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a semiconductor chip, and a third electrode. The second electrode includes a plurality of terminals, and one slit. The one slit is formed between adjacent two out of the plurality of terminals. The semiconductor chip includes a first face and a second face. The first face is connected to the first electrode via a joining material. The second face is opposite the first face and connected to the second electrode via a joining material. The third electrode is connected to the second face via a joining material, inside the slit provided in the second electrode.