Semiconductor Electrode Stack for Low On-Resistance SiC Substrates
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Solution Overview
Problem
Existing semiconductor devices face challenges in reducing on-resistance, particularly in vertical semiconductor elements using SiC semiconductor substrates.
Innovation Solution
The semiconductor device incorporates a semiconductor layer with a thinner semiconductor substrate, a first and second electrode layer, an insulating film covering the first electrode layer's end portion, a plating layer covering the rest of the first electrode layer, and a mold layer covering the insulating film, with specific thicknesses and materials used to enhance structural integrity and reduce on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the semiconductor substrate is made thinner to reduce on-resistance, then the on-resistance is reduced, but the structural integrity and durability under high-temperature and humidity conditions deteriorate
Solution Approach 1:
The patent applies local quality by making the semiconductor substrate thinner only in specific regions where low on-resistance is critical, while maintaining adequate thickness in other areas to preserve structural integrity. This is achieved through selective thinning processes that create non-uniform substrate thickness, optimizing the balance between electrical performance and mechanical strength in different locations of the device.
Solution Approach 2:
The patent employs composite materials by combining the semiconductor substrate with supporting layers and protective coatings. These composite structures provide mechanical reinforcement to the thinned substrate, ensuring that the reduced-thickness regions maintain sufficient structural integrity and durability under high-temperature and humidity conditions while achieving lower on-resistance.
Data Source
AI summary
A semiconductor device includes a semiconductor layer that includes a semiconductor substrate having a first thickness and has a main surface, a main surface electrode that is arranged at the main surface and has a second thickness less than the first thickness, and a pad electrode that is arranged on the main surface electrode and has a third thickness exceeding the first thickness.