Semiconductor Electrode Stack Structure for Warpage Reduction
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Solution Overview
Problem
Conventional semiconductor device manufacturing methods for chip size packages face challenges in reducing warpage, which is influenced by the size of the semiconductor chip and associated electrode structures, leading to obstacles in various manufacturing processes.
Innovation Solution
A semiconductor device and manufacturing method that incorporate a support base with thin-film metal electrodes, thick-film metal bodies, and thick-film resin bodies, along with specific film structures that manage thermal expansion coefficients to minimize warpage, including a thin-film resin layer and additional films that provide thermal expansion coefficient matching and stress reduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CSP manufacturing methods are used, then chip size package structure is achieved, but warpage occurs during manufacturing process
Solution Approach 1:
The patent changes the thermal expansion coefficient parameter by introducing a resin layer with specific thermal expansion properties between the semiconductor chip and support base. This parameter matching reduces differential thermal stress and prevents warpage during temperature variations in manufacturing processes.
Solution Approach 2:
The patent uses composite material structure combining semiconductor chip, resin layer, and support base. The resin layer acts as a buffer material with intermediate properties that reconcile the thermal expansion differences between the chip and support base, maintaining wafer flatness while achieving CSP structure.
2Adaptability or versatility
If large semiconductor chips are used for CSP structure, then integration is improved, but warpage increases
Solution Approach 1:
The patent applies local quality by introducing the resin layer specifically at the interface between the chip and support base where thermal stress concentrates. This localized intervention addresses the warpage issue without affecting the overall CSP integration benefits of large chip size.
3Reliability
If electrode size is increased for CSP structure, then electrical performance is improved, but warpage is exacerbated
Solution Approach 1:
The resin layer serves as an intermediary element between the electrode structure and support base. It mediates the thermal stress transmitted through the electrode, allowing larger electrodes for better electrical performance while preventing warpage propagation to the entire wafer structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces warpage and tensile stress in semiconductor devices by carefully managing the thermal expansion coefficients and structural thicknesses, maintaining coplanarity and reducing potential thermal stress, thereby enhancing the manufacturing process efficiency.
Implementation Method 1
A thermal expansion coefficient of the first film is between a thermal expansion coefficient of the thick-film resin body and a thermal expansion coefficient of the semiconductor. A thermal expansion coefficient of the second film is smaller than the thermal expansion coefficient of the thick-film resin body.
Data Source
AI summary
A semiconductor device includes a thin-film metal electrode provided on a first main surface of a support base, a thin-film resin layer covering an edge of the thin-film metal electrode, a thick-film metal body located above the thin-film metal electrode and containing copper, a thick-film resin body covering a lateral surface of the thick-film metal body, and a structure body including at least one of a first film provided on the first main surface and a second film provided on a second main surface. The thick-film metal body, the thin-film metal electrode, and the support base are arranged along a direction of a first axis. Upper surfaces of the thick-film metal body and the thick-film resin body extend along a reference plane intersecting with the first axis. A thermal expansion coefficient of the first film is between those of the thick-film resin body and a semiconductor of the support base.