Semiconductor Device Electrode Connection Structure
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Solution Overview
Problem
The existing semiconductor devices face issues with rapid current density and temperature rise during on-off operations, leading to reduced breakdown tolerance due to the surface electrode being connected only to the impurity region, causing current to flow through both the terminal and impurity regions, resulting in potential semiconductor layer damage.
Innovation Solution
The semiconductor device includes a semiconductor layer with an impurity region, a terminal region of higher impurity concentration along its peripheral edge, and a concentration reducing region at the boundary between the impurity and terminal regions, allowing current to flow directly from both regions to the surface electrode, thereby reducing current density and temperature rise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the surface electrode is connected only to the impurity region, then the device structure is simple, but the current density and temperature rise rapidly during on-off operations, reducing breakdown tolerance
Solution Approach 1:
The patent segments the electrode connection structure by introducing a terminal region as an intermediate zone between the impurity region and the surface electrode. This segmentation allows current to be distributed across multiple regions (impurity region, terminal region, and directly to the electrode), preventing excessive current density concentration and reducing temperature rise, thereby improving breakdown tolerance while maintaining structural simplicity.
2Ease of manufacture
If the surface electrode is connected only to the impurity region, then the manufacturing process is simple, but current flows through both terminal and impurity regions, causing potential semiconductor layer damage
Solution Approach 1:
The terminal region serves as an intermediary between the impurity region and the surface electrode. It provides a dedicated current collection zone that mediates the current flow path, allowing current to be collected from both the impurity region and the terminal region before reaching the electrode. This intermediary structure prevents harmful current concentration that could damage the semiconductor layer, while adding minimal manufacturing complexity.
Data Source
AI summary
A semiconductor device includes a semiconductor layer of a first conductivity type, an impurity region of a second conductivity type formed in a surface layer portion of the semiconductor layer, a terminal region of the second conductivity type that is formed in the surface layer portion of the semiconductor layer along a peripheral edge of the impurity region and that has a second conductivity type impurity concentration higher than a second conductivity type impurity concentration of the impurity region, and a surface electrode that is formed on the semiconductor layer and that has a connection portion connected to the impurity region and to the terminal region.