Semiconductor Device Electrode Positioning for Thermal Stress Relief
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Solution Overview
Problem
The connection between the metal pattern and the main electrode in semiconductor devices degrades due to thermal expansion and contraction, leading to separation issues when the device alternates between high and low temperatures.
Innovation Solution
A semiconductor device design featuring a base plate with unit structures that include an insulating substrate, a metal pattern, and a main electrode, where the lower end portions of the main electrodes are strategically positioned closer to the outer edges of the base plate, enhancing heat dissipation and reducing stress on the connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the semiconductor device operates with repeated thermal cycles, then the semiconductor element generates thermal energy causing temperature increase, but the connection between the metal pattern and the main electrode degrades due to thermal expansion and contraction
Solution Approach 1:
The base plate is divided into a plurality of unit structures, with each unit structure having its own main electrode connected to a peripheral portion of the metal pattern. This segmentation distributes the thermal stress across multiple independent connection points, preventing concentrated stress degradation at any single connection point.
Solution Approach 2:
The lower end portions of the main electrodes are positioned at peripheral portions of the metal pattern closest to the outer edge of the base plate. This local positioning optimizes heat dissipation at the connection points while reducing thermal expansion stress on the solder joints, as the peripheral locations experience less constraint from the base plate structure.
2Reliability
If the main electrode is connected to the metal pattern using solder, then electrical connection is achieved, but the connection degrades and separates due to repeated thermal expansion and contraction
Solution Approach 1:
The base plate is divided into a plurality of unit structures, with each unit structure having its own main electrode connected to a peripheral portion of the metal pattern. This segmentation distributes the thermal stress across multiple independent connection points, preventing concentrated stress degradation at any single connection point.
Solution Approach 2:
The lower end portions of the main electrodes are positioned at peripheral portions of the metal pattern closest to the outer edge of the base plate. This local positioning optimizes heat dissipation at the connection points while reducing thermal expansion stress on the solder joints, as the peripheral locations experience less constraint from the base plate structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design inhibits degradation of the connection between the metal pattern and the main electrode by increasing heat dissipation at the connections, thereby extending the thermal cycle life of the semiconductor device.
Implementation Method 1
enhancing heat dissipation at the connections
Implementation Method 2
parts in the semiconductor device are thermally expanded and contracted repeatedly
Data Source
AI summary
A base plate, and a plurality of unit structures formed on the base plate are provided. Each of the unit structures including an insulating substrate fixed on the base plate, a metal pattern formed on the insulating substrate, a semiconductor element electrically connected to the metal pattern, and a main electrode having an upper end portion exposed to the outside and a lower end portion connected to a peripheral portion of the metal pattern closest to an outer edge of the base plate.