Semiconductor Electrode Layout to Reduce Thermal Stress Damage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor devices face reliability issues due to thermal stress caused by mismatched thermal expansion coefficients between the strap member and the semiconductor element, leading to potential damage and reduced device performance.
Innovation Solution
The semiconductor device incorporates a first conductive member with a non-bonding portion and a second electrode design that includes a finger electrode portion, along with an insulating film to cover the finger electrode, reducing internal resistance and thermal stress by minimizing direct bonding to the semiconductor element.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the strap member is bonded to cover almost the entire surface of the electrode on the semiconductor element, then electrical connectivity is improved, but thermal stress damage occurs due to mismatched thermal expansion coefficients
Solution Approach 1:
The conductive member is divided into multiple regions with different bonding characteristics: a first region that bonds to the electrode and a second region that does not bond to the electrode. This segmentation allows the bonding area to be optimized for electrical connectivity while the non-bonding area accommodates thermal expansion differences, resolving the contradiction between connectivity and thermal stress resistance.
2Reliability
If the conductive member is bonded to the entire electrode surface, then electrical connectivity is maximized, but the semiconductor element may be damaged by thermal stress
Solution Approach 1:
Different regions of the conductive member are assigned different bonding properties: the first region has bonding capability for optimal electrical contact, while the second region has no bonding capability to prevent stress transfer. This local differentiation maintains electrical connectivity where needed while protecting the semiconductor element from thermal stress in other areas.
3Object-affected harmful factors
If thermal expansion coefficients of the strap member and semiconductor element are made equal, then thermal stress is reduced, but material selection and manufacturing complexity increase
Solution Approach 1:
The harmful bonding function is extracted from the entire conductive member and retained only in the first region, while the second region is designed to be non-bonding. This extraction allows the use of materials with different thermal expansion coefficients without causing thermal stress damage, as the non-bonding region isolates the semiconductor element from stress transfer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the reliability of the semiconductor device by preventing damage from thermal stress and improving electrical connectivity while maintaining productivity and reducing internal resistance.
Implementation Method 1
the thermal expansion coefficients of the strap member and the semiconductor element are not necessarily equal. Therefore, thermal stress caused by a difference in the thermal expansion coefficients is generated in a region where the strap member and the semiconductor element are bonded
Implementation Method 2
the semiconductor element includes an insulating film configured to cover the finger electrode portion
Data Source
AI summary
There is provided a semiconductor device, including: a semiconductor element which includes an element main surface and an element rear surface that face opposite sides in a thickness direction and in which a first electrode and a second electrode are formed on the element main surface; a first conductive member electrically connected to the first electrode; a second conductive member electrically connected to the second electrode; and a sealing resin configured to cover part of the first conductive member, part of the second conductive member, and the semiconductor element.