Semiconductor Electrode Three-Layer Stack Dry Etching Resistance
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Solution Overview
Problem
Existing semiconductor device electrodes face issues with insufficient resistance to dry etching, leading to increased contact resistance, which hinders manufacturing flexibility and efficiency.
Innovation Solution
A manufacturing method involving a stacking process of electrode layers, including a first layer of aluminum, a second layer of a conductive material with a higher melting point than aluminum, and a third layer of palladium, with specific thickness ratios and anneal treatment, to form an ohmic electrode that suppresses contact resistance increase during dry etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the second electrode layer thickness is increased to suppress contact resistance increase by dry etching, then dry etching resistance improves, but manufacturing complexity increases
Solution Approach 1:
The patent specifies a minimum thickness of 10 nm for the second electrode layer to ensure sufficient dry etching resistance. This parameter optimization balances the need for protection against dry etching with the desire to keep the manufacturing process simple and efficient.
2Reliability
If a three-layer stacked structure with specific materials is used to suppress contact resistance increase, then dry etching resistance improves, but manufacturing cost increases
Solution Approach 1:
The protective Pd layer is applied only where needed - specifically on the second electrode layer that will be exposed to dry etching. This localized approach ensures protection where required while minimizing unnecessary material usage and cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces contact resistance during dry etching, enhancing manufacturing flexibility and improving the durability and usability of semiconductor devices.
Implementation Method 1
forming a second electrode layer mainly made of a conductive material that has a higher melting point than that of aluminum (Al) and reacts with aluminum (Al) at 450° C. or higher temperature
Implementation Method 2
a anneal treatment process of treating the electrode
Data Source
AI summary
A manufacturing method of a semiconductor device, includes: a stacking process of forming an electrode by stacking a plurality of electrode layers on a semiconductor layer; and a anneal treatment process of treating the electrode. The stacking process including processes of forming a first electrode layer mainly made of aluminum (Al) as one of the plurality of electrode layers; forming a second electrode layer mainly made of a conductive material that has a higher melting point than that of aluminum (Al) and reacts with aluminum (Al) at 450° C. or higher temperature, as one of the plurality of electrode layers, on the first electrode layer; and forming a third electrode layer mainly made of palladium (Pd) as an electrode layer most distant from the semiconductor layer among the plurality of electrode layers, on the second electrode layer.