Semiconductor Defect Detection via Electron Beam Emission Comparison
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Solution Overview
Problem
Existing methods for detecting defects in semiconductor devices face challenges in setting optimum test conditions due to various structural and equipment-related parameters, making it difficult to accurately identify and locate defects in contact plugs.
Innovation Solution
A method involving the formation of test patterns and unit cell patterns on a substrate, with electron beam irradiation to measure emitted electrons in different regions, allowing for the comparison of reference data to detect defects by distinguishing between normal, not-open, and bridge regions, thereby identifying defects in unit cell patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional electrical test methods are used to detect contact plug defects, then testing can be performed with existing equipment, but it is difficult to set optimum test conditions due to many parameters and structural factors, resulting in poor defect detection accuracy
Solution Approach 1:
The patent replaces conventional electrical test methods with electron beam-based measurement. Instead of using electrical signals to detect contact plug defects, the invention uses an electron beam to irradiate the contact plug region and measures secondary electron emission characteristics. This substitution eliminates the complexity of setting electrical test conditions while providing direct visualization and measurement capability, thereby improving defect detection accuracy without being affected by electrical parameter variations
Solution Approach 2:
The patent changes the measurement parameter from electrical properties to electron emission properties. By measuring secondary electron emission current or electron beam penetration depth instead of electrical conductivity, the method avoids the influence of multiple electrical parameters that complicate test condition setting. This parameter change enables simpler, more direct defect detection while maintaining high measurement precision
2Measurement precision
If electron beam irradiation is used to measure emitted electrons for defect detection, then defect detection accuracy is improved, but the measurement process becomes more complex due to multiple regions and parameters
Solution Approach 1:
The patent divides the measurement process into distinct segments: forming test patterns with known characteristics (normal contact holes, not-open contact holes, bridge contact holes), irradiating each region separately with electron beam, and comparing measured values against reference data from each segment. This segmentation simplifies the overall measurement complexity by breaking it into manageable, standardized steps while maintaining high detection accuracy through systematic comparison
Solution Approach 2:
The patent creates reference copies of electron emission characteristics from test regions with known states (normal, not-open, bridge). By measuring secondary electron emission from these reference regions and storing the characteristics as reference data, the system establishes a template for comparison. This copying approach simplifies defect detection in unit cell regions by providing pre-established benchmarks, reducing the complexity of real-time analysis while preserving measurement precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective detection of defects in semiconductor devices by comparing electron emission quantities across different regions, providing a reliable method to identify normal, not-open, and bridge states of contact plugs, thus improving defect detection accuracy.
Implementation Method 1
obtaining reference data with respect to the test patterns by irradiating an electron beam into the test region, obtaining cell data by irradiating the electron beam into the cell array region
Implementation Method 2
measuring a first quantity of emitted electrons by irradiating the electron beam in the normal region, measuring a second quantity of emitted electrons by irradiating the electron beam in the not-open region
Data Source
AI summary
A method of detecting a defect of a semiconductor device includes forming test patterns and unit cell patterns in a test region a cell array region of a substrate, respectively, obtaining reference data with respect to the test patterns by irradiating an electron beam into the test region, obtaining cell data by irradiating the electron beam into the cell array region, and detecting defects of the unit cell patterns by comparing the obtained cell data with the obtained reference data.