Semiconductor Electron Multiplying Structure for Vacuum Tubes
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Solution Overview
Problem
Existing electron multiplying structures in vacuum tubes, such as microchannel plates, face challenges related to constructional dimensions, power consumption, and sensitivity to magnetic fields, with low secondary emission yields and complex manufacturing processes.
Innovation Solution
A novel electron multiplying structure utilizing a semi-conductor material layer with a band gap of at least 2 eV, such as diamond-like materials or III-V/II-VI compounds, which creates electron hole pairs for enhanced secondary emission, combined with an organic light emitting diode layer for reduced power consumption and simplified construction, and an electric field for increased electron transport.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If microchannel plates are used for electron multiplication, then electron gain is achieved, but constructional dimensions become large and device complexity increases
Solution Approach 1:
The patent extracts the electron multiplication function from the complex microchannel plate structure and implements it using a simpler semiconductor material layer. This layer is deposited directly on the detection surface, eliminating the need for bulky hollow glass fiber structures while maintaining electron gain capability through secondary emission effects.
Solution Approach 2:
The patent replaces the mechanical microchannel plate structure with a thin semiconductor film that achieves electron multiplication through electrical and quantum mechanical effects. The semiconductor layer utilizes electron-hole pair generation and separation under applied electric fields, substituting the mechanical channel structure with a field-effect-based multiplication mechanism.
2Reliability
If high voltage potentials are applied for electron multiplication, then secondary electron emission is enhanced, but power consumption increases
Solution Approach 1:
The patent changes the operating parameters by using moderate voltage potentials combined with the semiconductor material's inherent properties to achieve high secondary emission yields. The semiconductor layer's band gap structure and carrier generation mechanisms allow efficient electron multiplication at lower power consumption compared to traditional high-voltage microchannel plates.
3Object-generated harmful factors
If diamond containing layers are used for secondary electron emission, then electron emission is achieved, but secondary emission yield remains low
Solution Approach 1:
The patent employs composite material structures combining semiconductor materials with specific properties that enhance secondary electron emission. The composite approach integrates materials with appropriate band gaps and carrier mobilities to achieve high secondary emission yields, overcoming the limitations of pure diamond layers.
4Reliability
If traditional electron multiplying structures are used, then electron gain is achieved, but sensitivity to magnetic fields increases
Solution Approach 1:
The patent replaces magnetic field-dependent electron multiplication mechanisms with a semiconductor-based field effect mechanism that is inherently less sensitive to magnetic fields. The semiconductor layer's charge carrier generation and transport are controlled by electric fields and material properties rather than magnetic field effects, reducing sensitivity to external magnetic interference.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a more compact, less power-intensive vacuum tube with improved signal-to-noise characteristics and higher secondary emission yields, suitable for mass production and reduced sensitivity to magnetic fields.
Implementation Method 1
the semi-conductor material layer creates electron hole pairs for enhanced secondary emission
Implementation Method 2
combined with an organic light emitting diode layer for reduced power consumption and simplified construction, and an electric field for increased electron transport
Data Source
AI summary
An electron multiplying structure for use in a vacuum tube using electron multiplying, the electron multiplying structure having an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, wherein the electron multiplying structure at least is composed of a semi-conductor material layer adjacent the detection windows. Also disclosed is a vacuum tube using electron multiplying with an electron multiplying structure.