Off-Center Semiconductor Element Placement for Thermal Management
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Solution Overview
Problem
Conventional semiconductor devices with a single semiconductor element on a conductor plate face heat transfer issues from power terminals, leading to potential temperature increases and operational restrictions, as the element is often centered and lacks a symmetric structure.
Innovation Solution
The semiconductor device design positions the semiconductor element off-center relative to the conductor plate, with increased distance from power terminals to minimize heat transfer, and includes additional conductor plates and connectors to manage heat dissipation and electrical paths efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the semiconductor element is disposed at the center of the conductor plate, then the structure is symmetric and easy to manufacture, but heat from the power terminal transfers to the semiconductor element causing temperature rise
Solution Approach 1:
The patent applies asymmetry by deliberately positioning the semiconductor element off-center on the conductor plate. Specifically, the semiconductor element is disposed closer to one edge of the conductor plate rather than at the center, creating an asymmetric layout that increases the distance between the power terminal and the semiconductor element. This asymmetric positioning reduces heat transfer from the power terminal to the semiconductor element, effectively lowering the semiconductor element's operating temperature while maintaining manufacturability.
2Device complexity
If the power terminal is positioned close to the semiconductor element, then the device complexity is reduced, but heat transfer from the power terminal to the semiconductor element increases
Solution Approach 1:
The patent uses the conductor plate as an intermediary element to manage heat transfer. By positioning the semiconductor element off-center on the conductor plate, the conductor plate acts as a thermal management intermediary that conducts heat away from the power terminal while directing it toward regions that do not heat the semiconductor element. This intermediary positioning strategy reduces the harmful thermal effects on the semiconductor element while maintaining a relatively simple overall device structure.
3Temperature
If the semiconductor element is positioned away from the power terminal, then heat transfer is suppressed, but the device structure becomes more complex
Solution Approach 1:
The patent applies local quality by creating different functional zones on the conductor plate. The conductor plate is designed with varying thermal and electrical properties in different regions, with the semiconductor element positioned in a specific zone that optimizes thermal management. This local differentiation allows the device to achieve effective heat suppression through strategic positioning without requiring complex overall structural changes, maintaining manufacturing feasibility while improving thermal performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses heat transfer from power terminals to semiconductor elements, maintaining optimal operating temperatures and reducing electrical losses by strategically positioning elements and connectors.
Implementation Method 1
heat of the first power terminal could transfer to the first semiconductor element via the first conductor plate
Data Source
AI summary
A semiconductor device may include a first conductor plate, a first semiconductor element that is a sole semiconductor element disposed on a main surface of the first conductor plate, an encapsulant encapsulating the first semiconductor element and a first power terminal connected to the first conductor plate within the encapsulant and projecting from the encapsulant along a first direction. The main surface of the first conductor plate may include a first side located close to the first power terminal and a second side located opposite the first side with respect to the first direction. With respect to the first direction, a distance from the first semiconductor element to the first side may be larger than a distance from the first semiconductor element to the second side.