Semiconductor Device Withstand Voltage via Embedded Insulator
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Solution Overview
Problem
Conventional high withstand voltage semiconductor devices face challenges in enhancing the dielectric breakdown voltage of insulating films without increasing the thickness of the insulating film, which limits the integration density of active and passive elements.
Innovation Solution
The semiconductor device incorporates a first insulator embedded within the semiconductor layer, which disperses the applied voltage and reduces the stress on the insulating film, allowing for improved withstand voltage without increasing the insulating film thickness, along with a floating region and guard ring structures to further enhance voltage dispersion and prevent conductivity type reversal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of the element isolation film is increased to improve withstand voltage, then the dielectric breakdown resistance is improved, but the planar size of the element isolation film increases, reducing the degree of integration
Solution Approach 1:
The element isolation film is divided into a first element isolation film and a second element isolation film with different thicknesses. The first element isolation film has a smaller thickness in a first region and a larger thickness in a second region, allowing different portions to serve different functions while maintaining overall integration density.
Solution Approach 2:
Different regions of the element isolation film are assigned different thicknesses based on their specific functional requirements. The first region has a thinner film suitable for high integration areas, while the second region has a thicker film providing enhanced withstand voltage where needed.
2Reliability
If the thickness of the element isolation film is increased to prevent dielectric breakdown, then the reliability is improved, but the degree of integration is reduced
Solution Approach 1:
The element isolation film is segmented into multiple regions with different thicknesses, allowing the structure to achieve high reliability in critical areas while maintaining high integration density in other areas, thus resolving the contradiction between reliability and productivity.
Solution Approach 2:
The thickness parameter of the element isolation film is varied across different regions to optimize both dielectric breakdown resistance and integration density. By changing the thickness parameter locally rather than uniformly, the patent achieves improved reliability without sacrificing overall integration.
Data Source
AI summary
A semiconductor device according to an aspect of the present invention includes a semiconductor layer, an insulating film formed on the surface of the semiconductor layer, a first insulator embedded in the semiconductor layer with a thickness larger than the thickness of the insulating film, and a resistive element formed on the first insulator. A semiconductor device according to another aspect of the present invention includes a semiconductor layer, an insulating film formed on the surface of the semiconductor layer, a resistive element formed on the insulating film, and a floating region formed on a portion of the semiconductor layer opposed to the resistive element through the insulating film and electrically floating from a periphery thereof.