Semiconductor Layer Structure for EMI Immunity and Eddy Current Control
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Solution Overview
Problem
Semiconductor integrated circuits in sensitive electronic devices are susceptible to disturbances caused by electromagnetic interference (EMI), which can disrupt their intended functions.
Innovation Solution
A semiconductor structure is designed with an electromagnetic interference immunity layer and a doped epitaxial layer, where the sum of thicknesses and the ratio of resistivities are optimized to confer increased immunity to EMI.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional semiconductor structures are used without optimized EMI immunity layers, then device complexity and manufacturing simplicity are maintained, but electromagnetic interference susceptibility increases and circuit reliability deteriorates
Solution Approach 1:
The semiconductor structure is divided into distinct functional layers: a support substrate layer and a device layer with optimized thickness and resistivity parameters. This segmentation allows each layer to be independently designed for its specific function - the support substrate provides mechanical strength while the device layer provides EMI immunity, resolving the contradiction between reliability and complexity
Solution Approach 2:
The patent applies parameter changes by optimizing specific physical parameters of the semiconductor layers, particularly thickness and resistivity. By controlling the thickness to be between 5-50 micrometers and adjusting resistivity to specific ranges, the structure achieves enhanced EMI immunity without excessive complexity, as these parameter optimizations can be integrated into existing manufacturing processes
2Reliability
If thicker EMI immunity layers are used, then EMI protection improves, but manufacturing precision requirements increase and production complexity worsens
Solution Approach 1:
The patent applies partial action by using a moderate thickness range (5-50 micrometers) rather than maximizing thickness. This partial approach provides sufficient EMI immunity for most applications while avoiding the excessive manufacturing precision requirements that would accompany much thicker layers, thus resolving the contradiction between reliability and manufacturing precision
Solution Approach 2:
By optimizing the thickness parameter to a specific range rather than using extreme values, the patent achieves a balance where EMI immunity is sufficiently improved without imposing excessive manufacturing precision requirements, allowing standard fabrication processes to maintain quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively reduces the impact of EMI on semiconductor devices, minimizing surface eddy currents and enhancing the reliability and accuracy of sensitive electronic circuits.
Implementation Method 1
minimizing surface eddy currents
Implementation Method 2
electromagnetic interference (EMI)... Strong electromagnetic fields from certain components in the system can unintentionally couple into a sensing device
Data Source
AI summary
The present disclosure describes a structure that includes an electromagnetic interference (EMI) immunity layer and a doped epitaxial layer on the EMI immunity layer. The EMI immunity layer has a first resistivity and a first thickness. The doped epitaxial layer has a second resistivity and a second thickness. A sum of thicknesses is defined by a combination of the first thickness and the second thickness. A first ratio is the sum of the first thicknesses to the second thickness. A second ratio is the second resistivity to the first resistivity. A product of the first ratio and the second ratio is equal to or less than about 1.