Semiconductor Emitter Aperture Ratio for Heat Dissipation
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Solution Overview
Problem
Semiconductor devices using compound semiconductors like GaN and AlGaN face challenges in optimizing emitter arrangements for high power output and high voltage operation, particularly in managing heat and maintaining uniform aperture regions, which affects maximum output and device yield.
Innovation Solution
The semiconductor device features a specific arrangement of emitters with a first conductive-type reflective layer, an active layer, an aperture layer with a blocking region, and a second conductive-type reflective layer, where the ratio of the aperture region diameter to the pitch between adjacent emitters is optimized between 1:3 to 1:5, and the spacing between the corner region and the outermost emitter is uniform, ensuring efficient heat dissipation and maximum output.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the number of emitters is increased to achieve high power output, then the maximum output is improved, but heat dissipation becomes more difficult and device reliability deteriorates
Solution Approach 1:
The patent divides the light emitting surface into multiple discrete emitters (first, second, and third emitters) arranged in a specific pattern. This segmentation allows each emitter to be independently optimized for heat dissipation while collectively achieving high power output. The emitters are spaced apart to create heat dissipation pathways between them.
Solution Approach 2:
The patent applies different aperture ratios to different emitters based on their local thermal conditions. The first emitter (at the corner) has a smaller aperture ratio than the second and third emitters (at the center), as the corner region has better heat dissipation characteristics. This local optimization ensures each emitter operates at its maximum efficiency without causing thermal runaway.
2Power
If the aperture ratio is increased to improve light output, then the maximum output is improved, but heat generation increases and device reliability deteriorates
Solution Approach 1:
The patent optimizes the aperture ratio parameter to balance light output and heat generation. By setting the aperture ratio between 10% and 50%, the patent achieves sufficient light emission while maintaining adequate heat dissipation. The specific aperture ratio is adjusted based on the emitter's position and thermal environment.
3Power
If emitters are arranged closely to increase power density, then the maximum output is improved, but uniformity of aperture regions deteriorates
Solution Approach 1:
The patent employs an asymmetric arrangement where the first emitter (corner) has different aperture characteristics than the second and third emitters (center). This asymmetric design compensates for the non-uniform heat dissipation patterns in closely spaced emitter arrays, maintaining overall uniformity of light output and aperture regions across the device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This optimized emitter arrangement achieves maximum output and improves device yield by ensuring uniform aperture regions and efficient heat management, regardless of the number of emitters, even in saturated regions, thus addressing the challenges of high power and high voltage operations.
Implementation Method 1
a first conductive-type reflective layer having a first reflectance
Implementation Method 2
a second conductive-type reflective layer on the aperture layer and having a second reflectance smaller than the first reflectance
Implementation Method 3
an aperture layer on the active layer and including an aperture region and a blocking region surrounding the aperture region
Data Source
AI summary
A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.