Semiconductor Module Emitter Layout for Uniform IGBT Switching

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Solution Overview

Problem

Non-uniform switching operations among parallel-connected IGBT elements in semiconductor modules lead to variations in heat generation, deteriorating the reliability of the module.

Innovation Solution

A semiconductor module design with varying distances between bonding member connection points on the conductor patterns, adjusting the length of auxiliary emitter wiring to equalize voltage drops and inductances across parallel-connected semiconductor elements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conductive member (auxiliary emitter) is provided to connect emitters of parallel-connected IGBT elements to a gate drive circuit, then the switching operation control is improved, but non-uniform switching operation causes variation in heat generation and reliability deteriorates

Engineering Contradiction:
Improvereliability of semiconductor moduleVSAvoiduniformity of switching operation
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent applies local quality by making the auxiliary emitter wiring structure non-uniform. Specifically, the distance from the connection point of the auxiliary emitter to the connection point of the main current flow varies for each parallel-connected semiconductor element. This localized variation in wiring distance compensates for differences in switching characteristics among parallel elements, equalizing the total inductance and voltage drop for each element, thereby achieving uniform switching operation and improving reliability.

Inventive Principle:
Principle #3Local quality

2Ease of operation

If auxiliary emitter wiring is provided for parallel-connected IGBT elements, then gate drive control is enabled, but variations in wiring distance cause non-uniform switching operation and heat generation variation

Engineering Contradiction:
Improvegate drive controlVSAvoidheat generation uniformity
Core Design Contradiction:
Ease of operationVSTemperature

Solution Approach 1:

The patent applies parameter changes by intentionally varying the distance parameter of the auxiliary emitter wiring from the main current flow connection point. By adjusting this geometric parameter for each parallel element, the total inductance and voltage drop are equalized across all parallel-connected semiconductor elements. This parameter optimization ensures uniform switching operation and consistent heat generation, preventing thermal hotspots and improving overall module reliability.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20250259968A1Semiconductor module and vehicle
Publication Date: 2025.08.14 FUJI ELECTRIC CO LTD
  • US20250259968A1 patent drawing
  • US20250259968A1 patent drawing
  • US20250259968A1 patent drawing

AI summary

A semiconductor module, including: a wiring board having first and second conductor patterns; a plurality of semiconductor elements disposed on the first conductor pattern; first and second bonding members connecting first and second main electrodes of the semiconductor elements to the first and second conductor patterns, respectively; first and second terminals connected to the first and second main electrodes of the semiconductor elements through the first and second conductor patterns, respectively; and a third terminal connected to the second conductor pattern through a plurality of third bonding members. A distance between a connection point of each of the third bonding members to the second conductor pattern and a connection point of the second bonding member to the second conductor pattern varies depending on a distance between a predetermined position and a connection point of the second bonding member to the second main electrode of each semiconductor element.