Semiconductor Empty Spaces Reduce Parasitic Capacitance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As integration density of semiconductor devices increases, crosstalk and parasitic capacitance between conductive patterns become significant issues, particularly affecting bit line sensing margins in memory devices due to reduced distances between conductive patterns.
Innovation Solution
The semiconductor device incorporates specific line structures with insulating isolation patterns and conductive structures, featuring empty spaces with varying heights and insulating capping patterns to reduce parasitic capacitance, including a first and second empty space with different height portions and an insulating capping pattern that encloses upper portions of these spaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density of semiconductor devices is increased, then productivity and device capability are improved, but parasitic capacitance between conductive patterns increases and bit line sensing margin deteriorates
Solution Approach 1:
The patent extracts the harmful conductive material from the region between bit lines by forming empty spaces (voids) in the conductive layer. This removes the source of parasitic capacitance while maintaining the overall device structure and integration density, directly addressing the contradiction between high density and low parasitic capacitance
Solution Approach 2:
The patent introduces a porous structure (empty spaces/voids) into the conductive layer between bit lines. This porous configuration reduces the effective dielectric constant and parasitic capacitance in critical regions while preserving conductive pathways where needed, enabling high integration density without sacrificing bit line sensing margin
2Productivity
If distances between conductive patterns are decreased to increase integration density, then productivity is improved, but crosstalk between conductive patterns increases
Solution Approach 1:
The patent removes conductive material from inter-bit-line regions by forming empty spaces, extracting the harmful element that causes crosstalk. This allows bit lines to be positioned closer together for high integration density while eliminating the crosstalk pathway through the conductive layer
Solution Approach 2:
The patent introduces an intermediary structure (empty space/void) between bit lines that mediates the electromagnetic interaction. This void acts as a buffer that reduces capacitive coupling and crosstalk between adjacent bit lines, enabling closer spacing without harmful interference
Data Source
AI summary
Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and second line structures extending in a direction on a substrate, an insulating isolation pattern between the first and second line structures and a conductive structure between the first and second line structures and next to the insulating isolation pattern along the direction. The semiconductor devices may also include an empty space including a first portion between the first line structure and the conductive structure and a second portion between the first line structure and the insulating isolation pattern. The first portion of the empty space may have a height different from a height of the second portion of the empty space.