Semiconductor Module Encapsulant With Sacrificial Particles for Corrosion

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Power semiconductor devices are susceptible to corrosion in environments with sulfur-containing gases, and current protection solutions are either expensive or ineffective.

Innovation Solution

A semiconductor module and device with a concentration of sacrificial particles, such as metal salts, semi-metal salts, metal oxides, or semi-metal oxides, dispersed within an electrically insulating polymer, which react with corrosive gases to protect metal surfaces.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If current protection solutions are used to protect metal surfaces from sulfur-containing gases, then corrosion protection is provided, but the solutions are expensive to implement

Engineering Contradiction:
Improvecorrosion protectionVSAvoidimplementation cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the chemical composition parameters of the encapsulant by incorporating sacrificial particles (metal salts, semi-metal salts, metal oxides, or semi-metal oxides with a cation) into the polymer matrix. These particles react with sulfur-containing gases to form stable sulfides, transforming the chemical protection mechanism from passive barrier to active chemical neutralization, thereby providing effective corrosion protection at lower cost

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite encapsulant material by dispersing sacrificial particles within the electrically insulating polymer volume. This composite structure combines the protective properties of the polymer with the corrosion-neutralizing properties of the sacrificial particles, achieving both mechanical protection and chemical corrosion resistance while maintaining electrical insulation

Inventive Principle:
Principle #40Composite materials

2Strength

If dense materials are used to protect semiconductor devices, then physical protection is provided, but sulfur-containing gases can still penetrate and cause corrosion

Engineering Contradiction:
Improvephysical protectionVSAvoidgas penetration
Core Design Contradiction:
StrengthVSObject-affected harmful factors

Solution Approach 1:

The sacrificial particles act as an intermediary substance between the sulfur-containing gases and the metal surfaces. These particles preferentially react with the corrosive gases to form stable sulfides, serving as a chemical mediator that intercepts and neutralizes the harmful substances before they can reach and corrode the metal components

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent converts the harmful sulfur-containing gases into beneficial stable sulfide compounds through the sacrificial particles. The corrosive gases that would otherwise damage metal surfaces are transformed into harmless or less harmful sulfide products, turning the harmful chemical environment into a protective chemical reaction

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The sacrificial particles effectively neutralize corrosive sulfur-containing gases, preventing corrosion of metal surfaces within the semiconductor module while maintaining the dielectric strength of the polymer and allowing for easier processing.

Implementation Method 1

The sacrificial particles are configured react with corrosive gases that may diffuse into the volume of electrically insulating polymer and thereby deprive the protected metal surface of a corresponding corrosive reaction

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Data Source

PatentUS20250069970A1Anti-corrosion particles in semiconductor device
Publication Date: 2025.02.27 INFINEON TECHNOLOGIES AG
  • US20250069970A1 patent drawing
  • US20250069970A1 patent drawing
  • US20250069970A1 patent drawing

AI summary

A semiconductor module includes a power electronics carrier including a structured metallization layer disposed on an electrically insulating substrate, a power semiconductor die mounted on the power electronics carrier, a housing that surrounds an interior volume over the power electronics carrier, a volume of electrically insulating polymer material disposed within the interior volume, and a concentration of sacrificial particles dispersed within the volume of electrically insulating polymer, wherein the sacrificial particles are metal oxide particles.