Semiconductor Cell Layout With Ending Cells for Etch Uniformity
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Solution Overview
Problem
As semiconductor devices become more highly integrated, challenges arise in manufacturing, such as pattern uniformity, etching process margin, and deterioration of mechanical properties of interlayer insulating layers, which existing technologies have not adequately addressed.
Innovation Solution
The semiconductor device incorporates a substrate with standard and ending cell areas, featuring active patterns, gate electrodes, wirings, and gate contacts, where the ending cell area includes dummy gate structures and power rails to enhance electrical connectivity and mechanical stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dummy patterns are added to improve pattern uniformity and etching process margin, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by creating different cell types (standard cells and ending cells) with different structures in specific locations. Ending cells are placed at the ends of string units to provide local mechanical support where needed, while standard cells maintain normal density in the middle regions. This localized approach improves pattern uniformity and etching margins at critical locations without unnecessarily complicating the entire device structure.
Solution Approach 2:
The patent segments the device into repeating string units, each containing a specific sequence of cell types (e.g., standard cell - ending cell - standard cell). This segmentation allows the dummy patterns and mechanical support structures to be systematically distributed throughout the device, improving overall manufacturing precision while maintaining a regular, manageable structure that doesn't excessively increase complexity.
2Manufacturing precision
If dummy patterns are added to improve etching process margin, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The patent divides the device into repeating string units with a fixed pattern of standard cells and ending cells. This segmentation allows for standardized manufacturing processes that can be efficiently repeated across the entire device, minimizing the impact on productivity while still providing the necessary etching process margins through the strategically placed ending cells.
Solution Approach 2:
By concentrating dummy patterns and mechanical support structures only in ending cells at specific locations rather than distributing them uniformly throughout the entire device, the patent minimizes the overall impact on manufacturing efficiency. The majority of the device consists of standard cells with normal density, allowing for efficient bulk processing while still achieving improved etching margins at critical locations.
3Strength
If dummy patterns are added to improve mechanical properties of interlayer insulating layers, then strength is improved, but device complexity increases
Solution Approach 1:
The patent provides mechanical support to interlayer insulating layers by placing ending cells with dummy patterns at specific locations where mechanical strength is most needed (at the ends of string units). This localized approach improves the mechanical properties of interlayer insulating layers without requiring complex structures throughout the entire device, thus minimizing the increase in device complexity.
Solution Approach 2:
The device is segmented into repeating string units with ending cells positioned at regular intervals. This segmentation provides periodic mechanical support to interlayer insulating layers, improving overall structural strength while maintaining a simple, repeating pattern that doesn't excessively increase device complexity.
Data Source
AI summary
A semiconductor device includes a substrate including a standard cell area and an ending cell area that at least partially surrounds the standard cell area; a first active pattern in the standard cell area; a first wiring that extends in a first direction and is on the first active pattern; a first gate electrode that extends in a second direction and is on the first active pattern; a first gate contact; a second active pattern in the ending cell area; a second wiring that extends in the first direction and is on the second active pattern; a second gate electrode that extends in the second direction and is on the second active pattern; and a second gate contact.