Non-Destructive Semiconductor ESD Testing via Decay Rate Database
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Solution Overview
Problem
Current methods for testing semiconductor electrostatic discharge (ESD) tolerance are destructive, limiting comprehensive testing and grading of manufactured products, which affects product reliability and pricing.
Innovation Solution
A non-destructive testing method involving determining ESD voltage levels, measuring and recording decay rates and characteristic shifts of sample components, and using a database to predict ESD withstand voltages of semiconductor elements, employing an electrostatic generator, current probe, and determination device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a destructive testing method is used to test ESD tolerance, then the ESD withstand voltage can be detected, but the semiconductor element is damaged and cannot be used for further testing or grading
Solution Approach 1:
The patent applies preliminary action by measuring basic characteristic values before ESD testing and comparing them with values after testing. This preliminary measurement establishes a baseline that allows detection of ESD effects without requiring destructive testing, enabling non-destructive ESD tolerance assessment through characteristic value comparison
Solution Approach 2:
The patent replaces the mechanical/direct electrical stress approach of destructive testing with an indirect measurement system. Instead of directly measuring ESD withstand voltage through destructive stress, the system substitutes electrical characteristic value measurements (current-voltage characteristics, capacitance, resistance) that correlate with ESD tolerance, allowing non-destructive assessment
2Productivity
If sample inspection is used to represent all elements, then testing cost is reduced, but comprehensive testing and product grading cannot be achieved
Solution Approach 1:
The patent applies universality by creating a testing system that can handle all semiconductor elements uniformly through non-destructive testing. The system measures basic characteristic values that are universal to the device type, allowing every element to be tested comprehensively rather than relying on statistical sampling, thereby enabling accurate product grading across the entire production batch
Solution Approach 2:
The patent uses feedback by comparing basic characteristic values measured before ESD testing with values measured after ESD testing. This feedback mechanism provides information about ESD effects on each individual element, enabling comprehensive assessment and grading of all products without requiring destructive testing, thus improving both productivity and grading accuracy
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables comprehensive, non-destructive testing of semiconductor elements for ESD tolerance, allowing for product grading and improving reliability and pricing differentiation.
Implementation Method 1
imposes a testing electrostatic discharge (ESD) voltage on the semiconductor element
Data Source
AI summary
A testing method and testing system for a semiconductor element are provided. The method includes following steps. A level of a testing electrostatic discharge (ESD) voltage is determined. A plurality of sample components is provided. The testing ESD voltage is imposed on the sample components for testing ESD decay rates of the sample components. ESD withstand voltages of the sample components are detected. The relation between the ESD withstand voltages and the electrostatic discharge rates are recorded to a database. The testing ESD voltage is imposed on the semiconductor element for testing an ESD decay rate of the semiconductor element. The database is looked up according to the ESD decay rate of the semiconductor element to determine an ESD withstand voltage of the semiconductor element.