Semiconductor ESD Layout With Shared Power Protection for Wide I/O DRAM

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Solution Overview

Problem

Wide I/O DRAM semiconductor devices face challenges in arranging data I/O circuits near data I/O terminals and maintaining uniform distances between these terminals and their associated circuits due to the large number of terminals, making efficient layout and ESD protection complex.

Innovation Solution

The semiconductor device incorporates data I/O circuits in terminal areas with overlapping power terminals, using low-resistance inline redistribution layers for power lines and ESD protection circuits outside the terminal area, allowing for high-density arrangement and uniform spacing of data and power terminals, and eliminates the need for additional ESD protection in data I/O circuits by absorbing ESD through power terminals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Length of moving object

If data I/O circuits are arranged in vicinity of each data I/O terminal, then the distance between terminals and circuits is reduced, but the layout complexity increases due to the large number of terminals

Engineering Contradiction:
Improvedistance between data I/O terminals and data I/O circuitsVSAvoidlayout complexity
Core Design Contradiction:
Length of moving objectVSDevice complexity

Solution Approach 1:

Multiple data I/O circuits are merged into a single shared data I/O circuit. The patent describes that a plurality of data I/O circuits share a common ESD protection circuit and power terminal, eliminating the need for separate ESD protection for each individual data I/O circuit. This merging approach reduces layout complexity while maintaining short distances between terminals and circuits.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

A single shared ESD protection circuit serves multiple data I/O circuits simultaneously. The patent implements a universal ESD protection structure where one ESD protection circuit protects multiple data I/O circuits through a shared power terminal, making the protection mechanism multi-functional and applicable to numerous terminals without increasing individual circuit complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If ESD protection circuits are added to each data I/O circuit, then ESD protection is improved, but the occupation area and device complexity increase

Engineering Contradiction:
ImproveESD protectionVSAvoidoccupation area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

Multiple data I/O circuits share a common ESD protection circuit and power terminal. The patent explicitly states that the plurality of data I/O circuits share the ESD protection circuit, which is connected to a shared power terminal. This merging eliminates redundant ESD protection structures, reducing the total occupation area while maintaining comprehensive ESD protection across all data I/O circuits.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The ESD protection function is copied to the shared power terminal level rather than being replicated at each data I/O circuit level. Instead of placing ESD protection circuits throughout the terminal area, the patent copies the protection function to a centralized shared power terminal, which then protects all data I/O circuits collectively, significantly reducing area occupation.

Inventive Principle:
Principle #26Copying

3Quantity of substance

If power terminals are overlapped with data I/O circuits in terminal areas, then high-density arrangement is achieved, but ESD management becomes more complex

Engineering Contradiction:
Improvedensity of data I/O circuitsVSAvoidESD management complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent merges the ESD protection function with the power terminal function. By making the ESD protection circuit share the power terminal, the patent combines two functions (power supply and ESD protection) into a single structure, enabling high-density arrangement of data I/O circuits over power terminals without increasing ESD management complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The shared power terminal serves multiple functions: it provides power to multiple data I/O circuits and simultaneously serves as the ESD protection point for all those circuits. This multi-functional design allows high-density circuit arrangement while simplifying ESD management through a universal protection interface.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS11764571B2ESD placement in semiconductor device
Publication Date: 2023.09.19 MICRON TECHNOLOGY INC
  • US11764571B2 patent drawing
  • US11764571B2 patent drawing
  • US11764571B2 patent drawing

AI summary

Disclosed herein is an apparatus that includes a first power ESD protection circuit arranged in a first circuit area; a plurality of data I/O circuits arranged in a second circuit area adjacent to the first circuit area in a first direction; a plurality of data I/O terminals arranged in the second circuit area, each of the plurality of data I/O terminals being coupled to an associated one of the plurality of data I/O circuits; a plurality of first power terminals arranged in the second circuit area; and a first power line extending in the first direction, the first power line coupling the plurality of first power terminals to the first power ESD protection circuit.