Semiconductor ESD Protection Circuit with Breakable Resistance
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Solution Overview
Problem
High-speed semiconductor devices are vulnerable to electro-static discharge (ESD) due to large differences in electric charge accumulation, which can damage internal circuits and disrupt data transmission.
Innovation Solution
A protective circuit is implemented with pad electrodes, wires, resistance portions, and protective elements connected in series, where the resistance portions are designed to break during ESD, disconnecting the common electrodes from the protective elements and maintaining uniform capacitance across pad electrodes to ensure reliable data acquisition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective circuit is added to prevent ESD damage, then reliability is improved, but device complexity increases
Solution Approach 1:
The protective element and resistance portion are merged into a single series connection between the pad electrode and common electrode, combining ESD protection and capacitance control functions in one compact structure
Solution Approach 2:
The protective circuit structure serves multiple functions: it provides ESD protection through the protective element and simultaneously maintains uniform capacitance characteristics through the series resistance portion, making the circuit multi-functional
2Reliability
If resistance portions are designed to break during ESD, then reliability is improved by disconnecting common electrodes, but manufacturing precision requirements increase
Solution Approach 1:
The resistance portion is pre-designed with specific breakdown characteristics that activate during ESD events, creating a predetermined failure mode that protects the common electrode from voltage spikes while maintaining normal operation under regular conditions
3Reliability
If data acquisition timing is adjusted to compensate for capacitance changes, then reliability is improved, but productivity decreases
Solution Approach 1:
The data acquisition timing is dynamically adjusted based on the capacitance state of the protective circuit, allowing the system to adapt its operation timing to maintain reliable data acquisition while minimizing impact on overall transmission performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents damage from ESD by ensuring that the semiconductor device can maintain data acquisition even when resistance portions break, allowing the semiconductor device to operate reliably by adjusting data acquisition timing to compensate for changed capacitances.
Implementation Method 1
A semiconductor device is vulnerable to electro-static discharge (ESD) due to large differences in electric charge accumulation
Implementation Method 2
a protective element having a non-linear electrical characteristic and connected between the resistance portion and the pad electrode
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate; a plurality of first pad electrodes provided above the semiconductor substrate; a plurality of first wires electrically connected to the plurality of first pad electrodes respectively; a first electrode commonly connected to the plurality of first wires; a second pad electrode provided above the semiconductor substrate; and a first resistance portion and a first protective element that are connected in series between the first electrode and the second pad electrode.