Semiconductor ESD Protection Layout With Overlapping Source-Drain Circuits

Solution Overview

Problem

Traditional semiconductor devices are vulnerable to electronic static discharge (ESD) due to the gate oxide structure being closer to the drain region, leading to potential damage, and existing protective measures occupy space and increase costs.

Innovation Solution

A semiconductor device structure with source and drain protective circuits, featuring source and drain contact windows and conductive elements that are electrically connected, with the first drain conductive elements partially overlapping the first source conductive elements, providing effective ESD protection without occupying additional space.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional protective elements are added to prevent ESD damage, then reliability is improved, but device area increases and manufacturing complexity increases

Engineering Contradiction:

ImproveESD protectionVSAvoiddevice area

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

The protective circuit elements are merged with the existing source and drain doped regions. The source protective circuit is formed within the source doped region, and the drain protective circuit is formed within the drain doped region, eliminating the need for separate protective structures and reducing overall device area.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The source and drain doped regions serve dual functions: they provide their standard transistor function while simultaneously serving as protective circuits against ESD. The conductive elements within these regions create protective pathways that divert ESD current away from the gate dielectric layer.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If traditional protective elements are added to prevent ESD damage, then reliability is improved, but device complexity increases

Engineering Contradiction:

ImproveESD protectionVSAvoiddevice complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The protective circuit elements are merged with the existing source and drain doped regions. The source protective circuit is formed within the source doped region, and the drain protective circuit is formed within the drain doped region, eliminating the need for separate protective structures and reducing overall device complexity.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The source and drain doped regions serve their own protective function without requiring external protective elements. The conductive elements within these regions automatically create protective pathways during ESD events, providing self-protection capability.

Inventive Principle:

Principle #25Self-service

3Reliability

If traditional protective elements are added to prevent ESD damage, then reliability is improved, but manufacturing cost increases

Engineering Contradiction:

ImproveESD protectionVSAvoidmanufacturing cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The protective circuit elements are merged with the existing source and drain doped regions. The source protective circuit is formed within the source doped region, and the drain protective circuit is formed within the drain doped region, eliminating the need for separate protective structures and reducing manufacturing steps and costs.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The source and drain doped regions serve dual functions: they provide their standard transistor function while simultaneously serving as protective circuits against ESD. This multi-functionality eliminates the need for additional manufacturing processes and materials required for separate protective elements.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The semiconductor device structure effectively protects against ESD by distributing energy away from the gate dielectric layer, enhancing reliability and reducing costs by eliminating the need for additional protective elements.

Implementation Method 1

a source protective circuit that comprises a plurality of source contact windows disposed on the source doped region and a plurality of first source conductive elements disposed on the source contact windows

Methodology Applied

Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

electronic static discharge (ESD)... When ESD current flows from the source region

Methodology Applied

Scientific EffectElectrostatic discharge: Electrostatic Discharge

Data Source

PatentUS11810872B2Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD)

Publication Date: 2023.11.07 VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION

AI summary

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate disposed on the semiconductor substrate. The semiconductor device structure also includes a source doped region and a drain doped region on two opposite sides of the gate. The semiconductor device structure further includes a source protective circuit and a drain protective circuit. From a side perspective view, a first drain conductive element of the source protective circuit partially overlaps a first source conductive element of the drain protective circuit.