Semiconductor ESD Protection via Segmented SCR Structures
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Solution Overview
Problem
Semiconductor devices are vulnerable to damage from electrostatic discharge (ESD) due to human body discharge or machine discharge, necessitating effective electrostatic discharge protection mechanisms.
Innovation Solution
The semiconductor device incorporates a voltage control element with source/drain regions, a base region, and electrostatic discharge regions, forming SCR structures to create discharge paths that manage and direct ESD currents, ensuring the device's protection through controlled voltage and impedance management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrostatic discharge protection paths are provided in the semiconductor device, then the device is protected from ESD damage, but the device complexity increases due to additional structures like doped regions and wells
Solution Approach 1:
The semiconductor device is divided into multiple functional regions including first and second source/drain regions, base region, first and second electrostatic discharge regions with respective doped regions and wells. Each segment serves a specific function in the ESD protection mechanism, allowing the complex protection function to be achieved through modular regional division rather than a single complex structure
Solution Approach 2:
The base region serves as an intermediary element coupled between the doped regions and source/drain regions, facilitating the ESD current path while maintaining the structural organization. The intermediary base region enables the protection function without requiring direct complex interconnection between all protective elements
2Reliability
If multiple electrostatic discharge regions are added to the semiconductor device, then the ESD protection is enhanced, but the manufacturing process becomes more difficult
Solution Approach 1:
The ESD protection structure is segmented into first and second electrostatic discharge regions with respective doped regions and wells, allowing independent formation and control of each protective element during manufacturing, which simplifies the overall fabrication process compared to a monolithic complex structure
Solution Approach 2:
The source/drain regions serve dual purposes: they function as normal device terminals and simultaneously serve as part of the ESD protection path by being coupled to both the base region and electrostatic discharge regions. This merging reduces the need for separate dedicated ESD structures, easing manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively directs and manages electrostatic discharge currents, preventing damage to the semiconductor device by establishing reliable discharge paths and maintaining the base region in a floating state during ESD events, thereby ensuring the device's operational integrity.
Implementation Method 1
the electrostatic current caused by 'electrostatic discharge (ESD)' event easily causes damage to the internal circuit. Therefore, an electrostatic discharge protection path needs to be provided in the semiconductor device
Implementation Method 2
conducting a first electrostatic discharge path between a first doped region of a first type and a first source/drain region of a second type, wherein a base region of the first type and a first well of the second type are coupled between the first doped region and the first source/drain region
Data Source
AI summary
The present disclosure relates to a semiconductor device, including a first source/drain region, a second source/drain region, a base region, a first electrostatic discharge region and a second electrostatic discharge region. The first source/drain region and the second source/drain region are configured to receive a first power voltage and a second power voltage, and are formed on the base region. The first electrostatic discharge region includes a first doped region and a first well. The first doped region is configured to receive the second power voltage, and formed in the first well. The second electrostatic discharge region includes a second doped region and a second well. The second doped region is configured to receive the first power voltage, and formed in the second well. The first source/drain region and the second source/drain region are disposed between the first electrostatic discharge region and the second electrostatic discharge region.