Semiconductor Module ESD Protection Switching Element

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Solution Overview

Problem

Semiconductor devices are vulnerable to damage from electrostatic discharge (ESD) despite having protection patterns, as they can still malfunction or burn out due to high voltage exposure.

Innovation Solution

A semiconductor module is designed with a substrate-mounted semiconductor device, a ground terminal, and a protection pattern connected through a switching element, which includes varistors, Zener diodes, or inductors that electrically connect the protection pattern to the ground terminal only when the voltage exceeds a set range, effectively diverting high voltage currents away from the device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a protection pattern is included in the semiconductor device, then the device has some level of ESD protection, but the device still suffers from damages resulting from ESD

Engineering Contradiction:
ImproveESD protection capabilityVSAvoidESD damage to semiconductor device
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A switching element is introduced as an intermediary component between the protection pattern and the ground terminal. This switching element remains inactive during normal operation and activates only during ESD events, serving as a mediator that connects the protection pattern to ground only when high voltage is detected, thereby enhancing ESD protection without affecting normal device operation

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The protection circuit transitions from a static configuration to a dynamic one by incorporating a switching element that changes its electrical state based on voltage conditions. The switching element dynamically connects or disconnects the protection pattern from ground depending on whether the applied voltage exceeds a predetermined threshold, enabling adaptive protection that activates only when needed

Inventive Principle:
Principle #15Dynamics

2Reliability

If the protection pattern is always connected to ground, then ESD protection is maximized, but normal operation is interfered with

Engineering Contradiction:
ImproveESD protection capabilityVSAvoidNormal device operation
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The protection circuit uses a voltage-dependent switching element that dynamically adjusts its connectivity based on operating conditions. During normal operation, the switching element maintains an off state, keeping the protection pattern isolated from ground and avoiding interference with device functionality. When ESD voltage exceeds the threshold, the switching element automatically transitions to an on state, establishing a low-impedance path to ground for ESD current dissipation

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The protection pattern is extracted from the always-connected configuration and selectively engaged only when needed. The switching element acts as a gate that separates the protection pattern from the ground terminal during normal operation, then connects them only during ESD events, thereby extracting the protective function from continuous operation and activating it only when required

Inventive Principle:
Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively protects semiconductor devices from ESD by ensuring that high voltage currents are safely routed to ground, preventing damage and ensuring device functionality.

Implementation Method 1

The switching element may include one of a variable resistor (varistor), a Zener diode and an inductor

Methodology Applied
Scientific EffectVaristor: Electrical Resistance

Implementation Method 2

The switching element may include one of a variable resistor (varistor), a Zener diode and an inductor

Methodology Applied
Scientific EffectZener diode breakdown: Avalanche Breakdown

Implementation Method 3

Semiconductor devices malfunction, become inoperative or burn out as a result of a momentary high voltage applied to the semiconductor devices when exposed to a high electric field. This phenomenon is called electrostatic discharge (ESD)

Methodology Applied
Scientific EffectElectrostatic discharge: Electrostatic Discharge

Data Source

PatentUS8493706B2Semiconductor module and data memory module having the same
Publication Date: 2013.07.23 SAMSUNG ELECTRONICS CO LTD
  • US8493706B2 patent drawing
  • US8493706B2 patent drawing
  • US8493706B2 patent drawing

AI summary

A semiconductor module and a data memory module having the same are provided. The semiconductor module includes a substrate having a semiconductor device, a ground terminal, a protection pattern, and a switching element. The ground terminal and the protection pattern are formed on the substrate. The switching element connects the ground terminal and the protection pattern in series. The switching element electrically connects the protection pattern and the ground terminal when a voltage applied to the substrate is beyond a set voltage range.