Semiconductor Device Surface Area Utilization via Vertical ESD Circuit Integration
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Solution Overview
Problem
The surface area is not utilized efficiently in semiconductor devices due to the presence of electrostatic discharge protection circuits and other circuits between the through-electrode or bump electrode placement regions and the internal circuitry, hindering compactness.
Innovation Solution
A semiconductor device design where transistors, such as the electrostatic discharge protection circuit, are disposed within the bump electrode placement region, eliminating the need for an external region for these components and allowing for more efficient use of surface area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrostatic discharge protection circuits are disposed between the through-electrode placement region and the internal circuitry, then the internal circuitry is protected from static electricity, but the surface area utilization becomes inefficient and compactness is hindered
Solution Approach 1:
The patent moves the electrostatic discharge protection circuit from the two-dimensional planar space between bump electrodes to the third dimension by forming it within the semiconductor substrate using through-electrodes. This vertical integration allows the protection circuit to occupy substrate volume rather than surface area, resolving the contradiction between protection functionality and surface area efficiency
Solution Approach 2:
The protection circuit is nested within the substrate structure itself, with through-electrodes passing through the substrate to form the protection circuit path. This nesting approach allows the protection circuit to be embedded within the existing substrate geometry rather than adding to the surface footprint
2Ease of manufacture
If circuits such as electrostatic discharge protection circuits are placed outside the bump electrode placement region, then the circuits can be properly formed, but additional space is required reducing device compactness
Solution Approach 1:
The invention transitions from planar circuit layout to three-dimensional substrate integration, allowing circuits to be formed within the substrate depth rather than requiring additional lateral space. This enables compact device footprint while maintaining manufacturability through vertical process integration
Data Source
AI summary
One semiconductor device includes nine surface micro-bumps laid out in a 3×3 matrix on a semiconductor substrate, a transistor that contains first and second diffusion layers formed on the semiconductor substrate, and power-supply wiring laid out on the semiconductor substrate. The aforementioned first diffusion layer is connected to one of the surface micro-bumps, the second diffusion layer is connected to the power-supply wiring, and the transistor is laid out in the region between the surface micro-bumps located on one edge in an X direction and the surface micro-bumps located on the other edge in said X direction.