Semiconductor Etching Layout for Openings With Different Depths
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Solution Overview
Problem
The manufacturing and integration of semiconductor devices are complex and involve numerous steps, leading to inefficiencies and increased costs due to the need for multiple operations to achieve varying depths of openings in semiconductor device structures.
Innovation Solution
A method is developed to form semiconductor device structures with openings of different depths by creating staggered first and second energy-sensitive patterns over a target layer, followed by an etching process that utilizes a lining layer to control the etching rates and depths of the openings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple separate etching operations are performed to create openings of different depths, then the manufacturing precision of opening depths is improved, but the device complexity and manufacturing time increase
Solution Approach 1:
The patent combines multiple etching operations into a single unified etching process by using a multi-layer mask structure with first and second energy-sensitive patterns at different positions and depths. This allows simultaneous formation of openings with different depths in different regions through one etching operation, eliminating the need for multiple separate etching steps while maintaining depth precision control.
Solution Approach 2:
The mask structure is segmented into multiple functional layers with first and second energy-sensitive patterns positioned at different locations and depths. This segmentation allows each region of the target layer to receive appropriate etching exposure independently, enabling precise control of opening depths in different areas while performing a single etching operation.
2Manufacturing precision
If multiple separate etching operations are performed to create openings of different depths, then the manufacturing precision of opening depths is improved, but the productivity decreases
Solution Approach 1:
The patent merges multiple etching operations into one unified process by implementing a multi-layer mask structure that enables simultaneous etching of openings with different depths across different regions. This single etching operation achieves what would otherwise require multiple sequential steps, thereby maintaining depth precision while significantly improving fabrication throughput and productivity.
Solution Approach 2:
The mask structure is prepared in advance with first and second energy-sensitive patterns positioned at specific locations and depths before the etching process. This preliminary configuration of the mask structure enables the single etching operation to automatically create openings of different depths without requiring multiple steps, thus improving productivity while maintaining precision.
3Productivity
If a single etching operation is performed to form openings of different depths, then the productivity is improved, but the manufacturing precision of opening depths deteriorates
Solution Approach 1:
The mask structure implements local quality by having first and second energy-sensitive patterns with different properties at different locations and depths. The first energy-sensitive pattern is positioned at a first location and depth, while the second energy-sensitive pattern is positioned at a second location and depth, allowing each region to be etched to a specific depth with high precision during a single etching operation.
Solution Approach 2:
The patent adds a vertical depth dimension to the mask structure by positioning energy-sensitive patterns at different depths within the mask layers. This three-dimensional mask configuration enables a single etching operation to create openings of different depths by exploiting the vertical positioning of mask patterns, thus achieving both high productivity and depth precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the simultaneous formation of openings with different depths, reducing fabrication costs and time while enhancing design flexibility in semiconductor device structures.
Implementation Method 1
performing an etching process to form a first opening and a second opening in the target layer. The first opening and the second opening have different depths.
Implementation Method 2
performing an energy treating process to transform an upper portion of the first energy-sensitive pattern into a treated portion before the lining layer is formed. An etching rate of the treated portion is different from an etching rate of the second energy-sensitive pattern during the etching process.
Data Source
AI summary
A method for preparing a semiconductor device structure includes forming a target layer over a semiconductor substrate, and forming a first energy-sensitive pattern over the target layer. The method also includes forming a lining layer covering the first energy-sensitive pattern, and forming a second energy-sensitive pattern over the lining layer. The first energy-sensitive pattern and the second energy-sensitive pattern are staggered. The method further includes performing an etching process to form a first opening and a second opening in the target layer. The first opening and the second opening have different depths.