Semiconductor Structure Etching With Doped-Layer Peripheral Protection
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Solution Overview
Problem
The etching process for semiconductor structures, particularly after forming an aluminum oxide layer, faces challenges in controlling etching duration and is prone to damaging film layers in the peripheral regions of semiconductor devices like DRAMs, where precise control is necessary to avoid damage and ensure accurate transistor formation.
Innovation Solution
A method involving a doped layer with a preset metal is introduced between the substrate and dielectric layer in the peripheral region, with a first diffusion film layer having a thickness greater than the doped layer, and a hard mask formed using spin coating, allowing for controlled etching to expose the first diffusion film layer while minimizing damage to the second region's film layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the etching process is performed to remove the aluminum oxide layer and expose the diffusion film layer, then the transistor formation is enabled, but the film layers in the peripheral region may be damaged due to uncontrolled etching duration
Solution Approach 1:
A doped layer is formed in advance in the peripheral region before the etching process. This doped layer serves as a pre-prepared protective structure that will remain intact during etching, preventing damage to underlying film layers while allowing precise control of the etching duration to expose the diffusion film layer in the active region.
Solution Approach 2:
Different regions of the substrate are treated differently: the active region allows etching to expose the diffusion film layer for transistor formation, while the peripheral region maintains the doped layer structure to protect underlying films. This local differentiation enables precise etching control without compromising overall film layer integrity.
2Reliability
If the first diffusion film layer is completely removed in the second region to prevent damage, then the underlying layers are protected, but the manufacturing process complexity increases
Solution Approach 1:
The doped layer acts as an intermediary protective structure in the peripheral region. Instead of completely removing the first diffusion film layer, the doped layer serves as a mediator that protects underlying films during etching while simplifying the overall process by maintaining a layered structure rather than requiring complete removal and subsequent protection steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures precise etching and prevents damage to the film layers in the second region by maintaining a sufficient distance between the doped layer and the substrate, allowing for complete or partial removal of the first diffusion film layer without harming the underlying layers, thus enhancing the manufacturing process for semiconductor structures.
Implementation Method 1
forming a hard mask on the first diffusion film layer by using a spin coating method
Implementation Method 2
etching each film layer corresponding to the first region and the second region toward the substrate, until the first diffusion film layer corresponding to the first region is exposed
Implementation Method 3
performing heat treatment on the remaining film layers corresponding to the first region and the second region
Data Source
AI summary
A method for manufacturing a semiconductor structure includes: forming a first diffusion film layer on a dielectric layer, a thickness of the first diffusion film layer being not less than a thickness of a doped layer; forming a hard mask on the first diffusion film layer; etching each film layer corresponding to a first region and a second region toward a substrate, until the first diffusion film layer corresponding to the first region is exposed; and next, removing a first metal oxide layer remaining on the dielectric layer corresponding to the second region. As a result of the presence of the doped layer, the hard mask corresponding to the second region has a relatively small thickness.