Semiconductor Etching for Electrode Defect Repair

The patent applies preliminary action by performing etching to remove the semiconductor layer below defective electrode regions before the electric characteristic test. This advance preparation creates a controlled test structure where the degree of layer removal can be precisely managed, eliminating the need for time-consuming test condition adjustments based on defect size. The etching step establishes a predetermined test configuration that simplifies subsequent testing while maintaining reliability.

The patent merges the test preparation step with the existing manufacturing process by integrating the etching operation into the production flow. The etching process that removes the semiconductor layer below defective electrodes is combined with other manufacturing steps, such as performing the etching before or during electrode formation. This integration ensures that test preparation is automatically completed as part of normal manufacturing, adding minimal complexity while significantly easing test condition setting.

The patent converts the harmful effect of electrode pattern defects and deficiencies into a beneficial outcome by using the defective regions as targets for selective etching. Instead of treating defects as problems that require extensive testing to detect, the method uses the defects to identify where semiconductor layer removal is needed. This transforms quality assurance from a detection-oriented process into a preventive process, where the etching step proactively addresses potential test failures before they occur, thereby improving both reliability and productivity.