Semiconductor Extension Layer for Stable Epitaxial Source/Drain Formation
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Solution Overview
Problem
As semiconductor devices with finFET structures experience increased integration, the proximity of transistors leads to unexpected issues due to shrinking distances between them, necessitating innovative structural solutions to maintain device performance and stability.
Innovation Solution
The semiconductor device incorporates a semiconductor extension layer between active regions, with an isolation pattern and source/drain semiconductor layers, where the extension layer is closer to the side surfaces than the isolation pattern, facilitating stable formation of epitaxial source/drain layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the distance between transistors is reduced to increase integration density, then productivity and integration degree improve, but device stability and performance deteriorate due to unexpected problems arising from proximity
Solution Approach 1:
A semiconductor extension layer is introduced as an intermediary structure between adjacent transistors and active regions. This extension layer, positioned closer to the side surfaces than the isolation pattern, acts as a mediator that enables stable formation of epitaxial source/drain layers while maintaining reduced transistor spacing, thus resolving the conflict between high integration density and device stability
Solution Approach 2:
The invention extends the semiconductor structure vertically by adding the extension layer that protrudes from the substrate surface. This dimensional extension allows the source/drain layers to be formed stably in the vertical direction while maintaining horizontal proximity between transistors, enabling high integration without sacrificing reliability
2Area of stationary object
If transistors are placed closer together to increase integration, then area utilization improves, but manufacturing precision deteriorates due to difficulty in forming stable epitaxial source/drain layers
Solution Approach 1:
The semiconductor extension layer serves as a preparatory intermediary structure that facilitates precise epitaxial growth. By providing a defined substrate extension closer to the active region side surfaces, it enables controlled formation of source/drain layers with accurate positioning, maintaining manufacturing precision even when transistors are densely packed
Solution Approach 2:
The extension layer is formed in advance before the epitaxial source/drain layers are deposited. This preliminary structural preparation creates optimal conditions for subsequent epitaxial growth, ensuring that even in high-density configurations, the source/drain layers can be formed with the required precision and stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for the stable formation of epitaxial source/drain semiconductor layers, enhancing device performance and addressing integration-related challenges by maintaining structural integrity and functionality as integration density increases.
Implementation Method 1
stable formation of epitaxial source/drain layers
Data Source
AI summary
A semiconductor device includes a first active region and a second active region, which are disposed in a semiconductor substrate and have side surfaces facing each other, an isolation pattern disposed between the first and second active regions, a semiconductor extension layer disposed between the first and second active regions, a first source/drain semiconductor layer disposed on the first active region, and a second source/drain semiconductor layer disposed on the second active region. The facing side surfaces of the first and second active regions are closer to the semiconductor extension layer than the isolation pattern.