Semiconductor Extension Step Prevents Die Bond Creeping
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Solution Overview
Problem
Existing semiconductor devices face contamination of wire bonding terminals due to creeping die bonds, which hinders miniaturization and thinning, as the extension parts are prone to contamination from die bonds, especially when resin is used, limiting design flexibility and increasing the risk of contamination from adhesive materials.
Innovation Solution
A semiconductor device design featuring a step in the outer edge region of the extension part, where the rewiring layer forms a barrier to prevent die bond creeping, allowing for the placement of wire bonding terminals without increasing the size or thickness of the extension part, thus preventing contamination and enabling miniaturization and thinning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the extension part is formed of resin to enable wire bonding terminal placement, then design flexibility is improved, but the extension part is prone to die bond contamination due to capillarity and material wettability
Solution Approach 1:
The extension part is divided into two distinct regions: a first region containing the wire bonding terminal and a second region without the terminal. The die bond is applied only to the second region, physically separating the contamination source from the sensitive terminal area. This segmentation allows the extension part to maintain its resin material for design flexibility while preventing die bond contamination of the wire bonding terminal.
2Object-affected harmful factors
If the wire bonding terminal is arranged closer to the semiconductor chip side to avoid contamination, then contamination risk is reduced, but there is no room in the arrangement region due to the small size of the lower semiconductor chip
Solution Approach 1:
The extension part extends in a direction perpendicular to the main surface of the semiconductor chip, utilizing the vertical dimension to create additional arrangement space. This allows the wire bonding terminal to be positioned in the extended region away from the chip edge, providing sufficient distance from potential contamination sources while maintaining compact chip dimensions.
3Object-affected harmful factors
If the extension part region is widened or the lower semiconductor chip is thickened to lengthen distance, then contamination prevention is improved, but miniaturization and thinning of the semiconductor device are hindered
Solution Approach 1:
The extension part has non-uniform structure with a first region and a second region having different characteristics. The wire bonding terminal is positioned in the first region where contamination protection is critical, while the second region can be optimized for other functions. This local differentiation allows contamination prevention without requiring uniform enlargement of the entire extension part, thus maintaining device miniaturization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The step in the outer edge region effectively prevents die bond contamination of wire bonding terminals, allowing for the thinning of semiconductor devices without compromising their miniaturization, especially when the first semiconductor chip is thinned, reducing the risk of contamination and maintaining design flexibility.
Implementation Method 1
since the extension part is formed of a resin, the extension part has minute unevenness on a surface as compared with a cross-section of a silicon substrate. Accordingly, creeping-up of the die bond to the extension part easily occurs due to capillarity.
Implementation Method 2
since wettability of identical or similar materials is generally better, a die bond mainly formed of resin creeps up more remarkably to the extension part formed of a resin.
Data Source
AI summary
Provided is a small and thin semiconductor device while preventing contamination of a wire bonding terminal caused by creeping-up of a die bond. The semiconductor device includes: a first semiconductor chip having a main surface formed with electrodes; an extension part extended outward from a side end surface of the first semiconductor chip; a rewiring layer formed from the main surface of the first semiconductor chip to a first surface of the extension part; a connection terminal provided on the rewiring layer of the extension part; a die bond that fixes the first semiconductor chip and the extension part to a substrate; and in the extension part, a step outside the connection terminal.