Integrated Semiconductor Fabrication Process Development System
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Solution Overview
Problem
Current semiconductor device fabrication processes require separate systems for lateral and vertical devices, leading to inefficiencies and prolonged development times due to the need for resetting multiple parameters for each type of device.
Innovation Solution
A method and system that integrate fabrication process development for both lateral and vertical semiconductor devices by using an initial target model with preset steps and parameter values, a general database with fixed parameter values, and a user interface to adjust parameters, allowing for simulation and parameter setting to produce a target model for simulation testing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate fabrication process development systems are used for lateral and vertical semiconductor devices, then each system can be optimized for its specific device type, but the overall development time increases and system complexity increases
Solution Approach 1:
The patent merges separate fabrication process development systems for lateral and vertical semiconductor devices into a single integrated system. The system uses a unified user interface and shared database structure that can accommodate both device types, eliminating the need to switch between separate systems and reducing overall development time while maintaining device-specific optimization capabilities
Solution Approach 2:
The fabrication process development system is designed with universal functionality to handle both lateral and vertical semiconductor devices. The system uses a standardized database structure with fixed fabrication parameter values that can be applied across different device types, allowing a single system to perform multiple functions previously requiring separate specialized systems
2Measurement precision
If all parameters are reset for simulation when developing new semiconductor device fabrication processes, then simulation accuracy is maintained, but development time is prolonged due to excessive variable parameters
Solution Approach 1:
The system performs preliminary action by pre-establishing a database of fixed fabrication parameter values that can be directly applied to simulation models. Instead of resetting all parameters for each new device development, the system captures and stores standardized parameter sets in advance, allowing developers to quickly apply proven parameters to new devices while maintaining simulation accuracy
Solution Approach 2:
The system manages parameter changes by transitioning from a state where all parameters must be manually reset to a state where fixed parameter values are captured from a database and applied automatically. This parameter management approach reduces the number of variable parameters that need manual adjustment while preserving simulation accuracy through the use of validated fixed values
3Productivity
If multiple fixed fabrication parameter values are applied from a general database, then development time is shortened and parameter setting is reduced, but adaptability to specific device requirements may be limited
Solution Approach 1:
The system implements dynamics by allowing the fabrication parameter database to be both fixed and adaptable. The database contains standardized fixed parameter values for quick application, but also enables modification and customization for specific device requirements. This dynamic structure allows the system to efficiently handle common cases with fixed values while adapting to specialized needs when necessary
Data Source
AI summary
A method and a system for developing semiconductor device fabrication processes are provided. The developments of vertical and lateral semiconductor device fabrication processes can be integrated in the system. First, according to a target semiconductor device and a specification thereof, an initial target model and a general database are captured. The initial target model and the general database are compared to obtain a corresponding relationship. According to the corresponding relationship, multiple fixed fabrication parameters of the general database are applied to the initial target model, such that at least one adjustable parameter is defined. Thereafter, the parameter is set according to a setting instruction received through a user interface to produce a target model to be simulated. A simulation test is performed with the target model, and the adjustable parameter is modified until the simulation result of the target model satisfies a standard result.