Semiconductor Device Failure Detection Circuit Bonding Wire Fusing
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Solution Overview
Problem
Existing semiconductor devices with built-in fuse functions face challenges in reliably disconnecting a defective output transistor, particularly when the short-circuit resistance value is high, leading to insufficient current flow and failure to fuse the bonding wire, which can result in continued current flow and potential device burnout.
Innovation Solution
Incorporating a failure detection circuit that controls the output transistor to increase current flow through the bonding wire when a failure is detected, ensuring reliable disconnection by fusing all bonding wires connected to the failed output transistor, and optionally extending the ON time for the output transistor if the fuse is not detected after the initial wire fusing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the output transistor is controlled to increase current flow through the bonding wire when failure is detected, then the bonding wire can be reliably fused to disconnect the failed output transistor, but the device complexity increases due to the addition of failure detection circuit and control mechanisms
Solution Approach 1:
The failure detection circuit proactively monitors the output transistor for failures before they can cause device burnout. When a failure is detected, the system immediately increases current flow through the bonding wire to fuse it and disconnect the failed transistor, preventing catastrophic failure.
Solution Approach 2:
The failure detection circuit continuously monitors the state of the output transistor and provides feedback to the output transistor driving circuit. Based on this feedback, the driving circuit adjusts the current flow through the bonding wire to achieve reliable disconnection when failure is detected.
2Reliability
If the short-circuit resistance value of the failed output transistor is large, then the current flow through the bonding wire becomes insufficient to fuse it, but the failed output transistor continues to conduct current and may cause device burnout
Solution Approach 1:
When failure is detected, the output transistor driving circuit changes the operating parameters by increasing the current flow through the bonding wire beyond the normal operating current. This parameter change ensures that even if the failed transistor has high resistance, sufficient current flows to fuse the bonding wire and disconnect the failed component.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively disconnects the current path of the failed output transistor, preventing further damage and ensuring the semiconductor device's functionality by reliably cutting off the current path and preventing burnout.
Implementation Method 1
a current larger than that in the case of failure non-detection flows through the bonding wire
Data Source
AI summary
The power control device reliably disconnects the current path of the failed output transistor. In particular, the power control device includes output transistors, an output terminal, bonding wires connecting the output transistors to the output terminal, output transistor driving circuits controlling the output of the output transistors, and a failure detection circuit detecting the failure of the output transistors. When the failure detection circuit detects the failure of the output transistors and outputs the failure detection signals, the output transistor drive circuits control the outputs of the output transistors so that a larger current flows through the bonding wires than when the failure is not detected.