Semiconductor Failure Structure Mitigating Short Circuit Damage
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Solution Overview
Problem
Semiconductor devices can enter a failure state characterized by a short circuit between power terminals, leading to explosions and damage to surrounding components due to high current and temperature levels, which existing technologies struggle to prevent effectively within a short circuit withstand time window.
Innovation Solution
A semiconductor device design incorporating a control region, a first power region, a second power region, and an isolation region with a failure structure that forms a low-resistive connection between the control and power regions during a failure state, allowing the device to turn off and prevent damage to surrounding components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing semiconductor device designs are used, then normal operation is maintained, but the device cannot prevent explosions and damage during failure state within the short circuit withstand time window
Solution Approach 1:
The patent converts the harmful high current and temperature conditions during failure state into a beneficial effect by utilizing them to melt the isolation region material and form a low-resistive connection, which then protects the device by shutting down current flow. The harmful thermal energy is transformed into a protective mechanism.
Solution Approach 2:
The isolation region serves as an intermediary element between the control region and first power region. During failure state, this intermediary material melts to create a conductive path that shorts the control terminal to the first power terminal, enabling device shutdown. The intermediary transforms the failure conditions into a protective state.
2Reliability
If a failure structure is added to form low-resistive connection during failure state, then device protection is achieved, but device complexity increases
Solution Approach 1:
The isolation region serves multiple functions: it provides electrical isolation during normal operation and transforms into a protective conductive path during failure state. This multi-functionality eliminates the need for separate protection structures, reducing overall device complexity while maintaining reliability.
Solution Approach 2:
The patent utilizes parameter changes in the isolation region material - specifically its melting point and resistivity - to achieve different functional states. The material transitions from high-resistivity isolated state to low-resistive connected state through temperature-induced phase change, enabling protection without additional structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device effectively mitigates current flow and temperature, preventing explosions and damage by forming a low-resistive connection during a failure state, thus ensuring safety and potentially reducing manufacturing costs compared to alternative solutions.
Implementation Method 1
The short circuit structure may be configured to form a low-resistive connection between the control region and the first power region during a failure state of the semiconductor device
Implementation Method 2
The failure structure may be configured to change a characteristic of at least some material between the control region and the first power region during a failure state of the semiconductor device
Data Source
AI summary
A semiconductor device is provided. In an embodiment, the semiconductor device comprises a control region, a first power region, a second power region, an isolation region and/or a short circuit structure. The control region comprises a control terminal. The first power region comprises a first power terminal. The second power region comprises a second power terminal. The isolation region is between the control region and the first power region. The short circuit structure extends from the first power region, through the isolation region, to the control region. The short circuit structure is configured to form a low-resistive connection between the control region and the first power region during a failure state of the semiconductor device.