Semiconductor Device With Fan-Out Redistribution Layer
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Solution Overview
Problem
In the manufacturing of small semiconductor devices, unprotected sidewalls can malfunction due to contact with solder material, and existing technologies face challenges in efficiently packaging these devices with multiple contact pads, leading to increased costs and complexity.
Innovation Solution
A semiconductor device design featuring a pocket with a 45-degree sidewall and a solderable or glueable re-distribution layer, where all contacts are fan-out to the top surface, eliminating the need for wire bonds, lead frames, and molding, and allowing for a single redistribution layer on one side of the carrier.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the device size is reduced to millimetre or less, then the component size is decreased, but the unprotected sidewalls may touch solder material causing malfunction
Solution Approach 1:
An isolating material is introduced as an intermediary substance between the device sidewalls and the external environment. This material fills the space around the device in the pocket, preventing solder material from contacting the sidewalls while allowing the device to maintain its small size. The isolating material acts as a protective barrier that resolves the contradiction between miniaturization and reliability.
2Reliability
If conventional packaging with wire bonds and lead frames is used, then sidewall protection is provided, but production costs and device complexity increase
Solution Approach 1:
The invention extracts and eliminates the complex wire bond and lead frame structures from the packaging system. Instead of using these traditional components, the device is mounted directly in a simple pocket with isolating material, removing unnecessary elements while maintaining sidewall protection functionality. This reduces device complexity and production costs while preserving reliability.
Solution Approach 2:
Protection is applied locally only where needed - the isolating material is placed specifically around the device sidewalls in the pocket, rather than using comprehensive packaging structures like mold cases and lead frames. This localized approach provides necessary protection while minimizing overall device complexity and material usage.
3Ease of operation
If multiple contact pads are distributed on different sides of the device, then electrical connections are achieved, but the assembly process becomes more complex requiring vias and wire bonding
Solution Approach 1:
The contact pads are redistributed from a three-dimensional distribution across multiple device surfaces to a two-dimensional arrangement on a single plane. By placing all contact pads on the same side of the device and positioning them within the pocket, the invention eliminates the need for vertical connections via vias and wire bonds, simplifying the assembly process to simple planar connections.
Solution Approach 2:
Multiple contact pads that would traditionally be distributed across different sides and require complex interconnections are merged into a single plane arrangement. All contacts are now accessible from one side within the pocket, combining what were previously separate connection points into a unified, simplified connection architecture.
Data Source
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AI summary
This disclosure relates to a semiconductor device comprises a substrate, a pocket within the substrate, a solderable/glueable re-distribution layer arranged in the pocket and a die. The die is arranged downwards, so that a base contact and an emitter contact of the die are facing the bottom of the semiconductor device, and so that a collector contact of the die is facing the top of the semiconductor device. The solderable/glueable re-distribution layer comprises a first re-distribution layer part and a second re-distribution layer part, wherein the first re-distribution layer part and the second re-distribution layer part are isolated from each other by an isolating material. The emitter contact is connected to the first re-distribution layer part and the base contact is connected to the second re-distribution layer part. The emitter contact via the first re-distribution layer part, the base contact via the second re-distribution layer part, and the collector contact are fan out to the top surface of the semiconductor device.