Semiconductor Fault Analysis Thermal Image Position Shift
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Solution Overview
Problem
In semiconductor failure analysis, temperature drift and positional variations during infrared imaging lead to edge noise in thermal images, complicating the extraction of thermal data from semiconductor devices.
Innovation Solution
A semiconductor failure analysis apparatus and method that calculates the imaging position for each thermal and background image, classifies them into regions based on position frequency distribution, and generates difference images for each group to reduce the impact of positional shifts, thereby suppressing edge noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple analysis images and background images are acquired in time series to perform failure analysis, then the thermal image extraction is enabled, but temperature drift causes imaging position shift leading to edge noise in the difference image
Solution Approach 1:
The patent segments the images into multiple groups based on imaging position. The imaging positions are calculated for each image, and images are classified into N groups according to their position characteristics. This segmentation allows subsequent difference image generation to be performed within each group, reducing the impact of position shifts across the entire image set.
Solution Approach 2:
The patent applies local quality by handling different regions of the image based on their imaging position characteristics. By creating region division units and classifying images into N groups according to their position, the system processes each local region (image group) with appropriate consideration for its specific position characteristics, thereby reducing edge noise in the difference images.
2Reliability
If the imaging device acquires images in time series to capture thermal characteristics, then thermal analysis is enabled, but temperature drift and component expansion/contraction cause positional variation in the imaging position
Solution Approach 1:
The patent performs preliminary action by calculating the imaging position for each image and classifying images into N groups based on their position characteristics before generating difference images. This preliminary classification prepares the data structure needed to subsequently generate difference images with reduced position shift effects, enabling reliable thermal analysis despite position variations.
3Loss of information
If difference images are generated from analysis images and background images with imaging position shift, then thermal image extraction is achieved, but edge noise appears in the difference image complicating failure analysis
Solution Approach 1:
The patent segments the image processing into N separate difference image generation operations, one for each image group. By performing difference image generation individually for each group rather than processing all images together, the system reduces the propagation of edge noise across the entire difference image, thereby preserving thermal information while minimizing harmful edge noise effects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively minimizes the effect of imaging position shifts, enhancing the accuracy of thermal image analysis and noise reduction in semiconductor failure analysis.
Implementation Method 1
a thermal image is acquired by imaging the semiconductor device by means of an imaging device having sensitivity in a wavelength range of infrared light
Data Source
AI summary
A failure analysis apparatus 1A is provided with a voltage applying unit 14 for applying a bias voltage to a semiconductor device S, an imaging device 18 for acquiring an image, and an image processing unit 30 for performing image processing, and the imaging device 18 acquires a plurality of analysis images each including a thermal image in a voltage applied state and a plurality of background images in a voltage non-applied state. The image processing unit 30 includes an imaging position calculating section 32 for calculating an imaging position of each of the analysis images and the background images, an image classifying section 33 for classifying the analysis images and the background images into N image groups based on a region division unit prepared for the imaging position, and a difference image generating section 34 for generating difference images between the analysis images and the background images individually for N image groups. Accordingly, a semiconductor failure analysis apparatus and method capable of suppressing the effect of a shift in imaging position in a thermal analysis image of a semiconductor device can be realized.