Semiconductor Field-Adjusting Structure for High Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices shrink in size, maintaining high breakdown voltage becomes increasingly challenging, particularly for high-voltage components, which are prone to damage without adequate voltage protection.
Innovation Solution
The semiconductor structure incorporates a field-adjusting structure comprising a substrate, gate, source and drain regions, and a field-adjusting structure with specific portions connected to the gate and source/drain regions, enhancing the local electric field and thereby increasing breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device size is decreased, then productivity and integration are improved, but breakdown voltage deteriorates
Solution Approach 1:
The patent applies local quality by creating a field-adjusting structure with specific doping concentrations and geometries in localized regions adjacent to the high-voltage component. This structure modifies the electric field distribution locally without affecting the overall device scaling, thereby maintaining high breakdown voltage in critical areas while allowing general device size reduction.
Solution Approach 2:
The field-adjusting structure acts as an intermediary element between the high-voltage component and the surrounding low-voltage circuitry. It mediates the electric field interactions, preventing field concentration that would lead to breakdown while allowing the device to maintain compact dimensions through proper field management.
2Reliability
If breakdown voltage is increased through conventional structures, then reliability is improved, but device complexity and area increase
Solution Approach 1:
The patent merges the field-adjusting function with existing device structures by integrating doped regions and geometric features into the conventional transistor layout. The field-adjusting structure shares fabrication steps with source/drain regions and uses the same doping processes, thereby achieving enhanced breakdown voltage without adding significant structural complexity or requiring separate manufacturing sequences.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of the field-adjusting structure improves breakdown voltage by approximately 12.5% while maintaining other characteristics such as Vt, Ion, and Ioff, making it suitable for high-voltage operations.
Implementation Method 1
The field-adjusting structure is disposed on the substrate at an outer side of one of the source region and the drain region... enhancing the local electric field and thereby increasing breakdown voltage
Data Source
AI summary
A semiconductor structure suitable for operating under a high voltage condition is provided. According to one aspect of the disclosure, the semiconductor structure includes a substrate, a gate, a source region, a drain region and a field-adjusting structure. The gate is disposed on the substrate. The source region and the drain region are disposed in the substrate and at opposite sides of the gate. The field-adjusting structure is disposed on the substrate at an outer side of one of the source region and the drain region. The field-adjusting structure comprises a first portion and a second portion. The second portion is disposed at an outer side of the first portion. The first portion is connected to the gate. The second portion is connected to the one of the source region and the drain region.